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UPD4482163GF-A60-A

更新时间： 2024-10-31 13:02:23
品牌 Logo 应用领域
日电电子 - NEC 存储内存集成电路静态存储器
页数 文件大小 规格书
28页 298K
描述
Cache SRAM, 512KX16, 3.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100

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中文翻译

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UPD4482163GF-A60-A 技术参数

生命周期：Obsolete零件包装代码：QFP
包装说明：LQFP,针数：100
Reach Compliance Code：unknownECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.84
最长访问时间：3.5 ns其他特性：PIPELINED ARCHITECTURE
JESD-30 代码：R-PQFP-G100JESD-609代码：e6
长度：20 mm内存密度：8388608 bit
内存集成电路类型：CACHE SRAM内存宽度：16
功能数量：1端子数量：100
字数：524288 words字数代码：512000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：512KX16
封装主体材料：PLASTIC/EPOXY封装代码：LQFP
封装形状：RECTANGULAR封装形式：FLATPACK, LOW PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified座面最大高度：1.7 mm
最大供电电压 (Vsup)：3.465 V最小供电电压 (Vsup)：3.135 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：TIN BISMUTH端子形式：GULL WING
端子节距：0.65 mm端子位置：QUAD
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：14 mm
Base Number Matches：1

UPD4482163GF-A60-A 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
µ
PD4482163, 4482183, 4482323, 4482363  
8M-BIT CMOS SYNCHRONOUS FAST SRAM  
PIPELINED OPERATION  
DOUBLE CYCLE DESELECT  
Description  
The µPD4482163 is a 524,288-word by 16-bit, the µPD4482183 is a 524,288-word by 18-bit, µPD4482323 is a 262,144-  
word by 32-bit and the µPD4482363 is a 262,144-word by 36-bit synchronous static RAM fabricated with advanced CMOS  
technology using Full-CMOS six-transistor memory cell.  
The µPD4482163, µPD4482183, µPD4482323 and µPD4482363 integrates unique synchronous peripheral circuitry, 2-  
bit burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the single  
clock input (CLK).  
The µPD4482163, µPD4482183, µPD4482323 and µPD4482363 are suitable for applications which require synchronous  
operation, high speed, low voltage, high density and wide bit configuration, such as cache and buffer memory.  
ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”). In  
the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal operation.  
The µPD4482163, µPD4482183, µPD4482323 and µPD4482363 are packaged in 100-pin PLASTIC LQFP with a 1.4  
mm package thickness for high density and low capacitive loading.  
Features  
• Single 3.3 V power supply  
• Synchronous operation  
• Operating temperature : TA = 0 to 70 °C (-A44, -A50, -A60)  
TA = −40 to +85 °C (-A44Y, -A50Y, -A60Y)  
• Internally self-timed write control  
• Burst read / write : Interleaved burst and linear burst sequence  
• Fully registered inputs and outputs for pipelined operation  
• Double-Cycle deselect timing  
• All registers triggered off positive clock edge  
• 3.3 V LVTTL Compatible : All inputs and outputs  
• Fast clock access time : 2.8 ns (225 MHz), 3.1 ns (200 MHz), 3.5 ns (167 MHz)  
• Asynchronous output enable : /G  
• Burst sequence selectable : MODE  
• Sleep mode : ZZ (ZZ = Open or Low : Normal operation)  
• Separate byte write enable : /BW1 to /BW4, /BWE (µPD4482323, µPD4482363)  
/BW1, /BW2, /BWE (µPD4482163, µPD4482183)  
Global write enable : /GW  
• Three chip enables for easy depth expansion  
• Common I/O using three state outputs  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. M14904EJ3V0DS00 (3rd edition)  
Date Published December 2002 NS CP(K)  
Printed in Japan  
The mark  shows major revised points.  
The mark # shows major revised points.  
2000  
1234567...28

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与UPD4482163GF-A60-A相关器件

型号 品牌 获取价格 描述 数据表
UPD4482163GF-A60Y NEC

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 		8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION DOUBLE CYCLE DESELECT
UPD4482163GF-A60Y RENESAS

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 		Cache SRAM, 512KX16, 3.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4482181 NEC

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 		8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION
UPD4482181GF-A65 NEC

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 		8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION
UPD4482181GF-A65-A NEC

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 		暂无描述
UPD4482181GF-A65Y NEC

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 		Cache SRAM, 512KX18, 6.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4482181GF-A75 NEC

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 		8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION
UPD4482181GF-A75-A NEC

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 		Cache SRAM, 512KX18, 7.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4482181GF-A75Y NEC

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 		Cache SRAM, 512KX18, 7.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4482181GF-A85 NEC

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 		8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION

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