5秒后页面跳转
UPD4482163GF-A50Y-A PDF预览

UPD4482163GF-A50Y-A

更新时间: 2024-11-18 15:56:07
品牌 Logo 应用领域
瑞萨 - RENESAS 静态存储器
页数 文件大小 规格书
28页 255K
描述
IC,SYNC SRAM,512KX16,CMOS,QFP,100PIN,PLASTIC

UPD4482163GF-A50Y-A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

UPD4482163GF-A50Y-A 数据手册

 浏览型号UPD4482163GF-A50Y-A的Datasheet PDF文件第2页浏览型号UPD4482163GF-A50Y-A的Datasheet PDF文件第3页浏览型号UPD4482163GF-A50Y-A的Datasheet PDF文件第4页浏览型号UPD4482163GF-A50Y-A的Datasheet PDF文件第5页浏览型号UPD4482163GF-A50Y-A的Datasheet PDF文件第6页浏览型号UPD4482163GF-A50Y-A的Datasheet PDF文件第7页 
DATA SHEET  
MOS INTEGRATED CIRCUIT  
μ
PD4482163, 4482183, 4482323, 4482363  
8M-BIT CMOS SYNCHRONOUS FAST SRAM  
PIPELINED OPERATION  
DOUBLE CYCLE DESELECT  
Description  
The μPD4482163 is a 524,288-word by 16-bit, the μPD4482183 is a 524,288-word by 18-bit, μPD4482323 is a 262,144-  
word by 32-bit and the μPD4482363 is a 262,144-word by 36-bit synchronous static RAM fabricated with advanced CMOS  
technology using Full-CMOS six-transistor memory cell.  
The μPD4482163, μPD4482183, μPD4482323 and μPD4482363 integrates unique synchronous peripheral circuitry, 2-bit  
burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the single  
clock input (CLK).  
The μPD4482163, μPD4482183, μPD4482323 and μPD4482363 are suitable for applications which require synchronous  
operation, high speed, low voltage, high density and wide bit configuration, such as cache and buffer memory.  
ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”). In  
the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal operation.  
The μPD4482163, μPD4482183, μPD4482323 and μPD4482363 are packaged in 100-pin PLASTIC LQFP with a 1.4 mm  
package thickness for high density and low capacitive loading.  
Features  
Single 3.3 V power supply  
Synchronous operation  
Operating temperature : TA = 0 to 70 °C (-A44, -A50, -A60)  
TA = 40 to +85 °C (-A44Y, -A50Y, -A60Y)  
Internally self-timed write control  
Burst read / write : Interleaved burst and linear burst sequence  
Fully registered inputs and outputs for pipelined operation  
Double-Cycle deselect timing  
All registers triggered off positive clock edge  
3.3 V LVTTL Compatible : All inputs and outputs  
Fast clock access time : 2.8 ns (225 MHz), 3.1 ns (200 MHz), 3.5 ns (167 MHz)  
Asynchronous output enable : /G  
Burst sequence selectable : MODE  
Sleep mode : ZZ (ZZ = Open or Low : Normal operation)  
Separate byte write enable : /BW1 to /BW4, /BWE (μPD4482323, μPD4482363)  
/BW1, /BW2, /BWE (μPD4482163, μPD4482183)  
Global write enable : /GW  
Three chip enables for easy depth expansion  
Common I/O using three state outputs  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. M14904EJ4V0DS00 (4th edition)  
Date Published February 2006 NS CP(K)  
Printed in Japan  
The mark shows major revised points.  
2000  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  

与UPD4482163GF-A50Y-A相关器件

型号 品牌 获取价格 描述 数据表
UPD4482163GF-A60 NEC

获取价格

8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION DOUBLE CYCLE DESELECT
UPD4482163GF-A60 RENESAS

获取价格

Cache SRAM, 512KX16, 3.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4482163GF-A60-A NEC

获取价格

Cache SRAM, 512KX16, 3.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4482163GF-A60-A RENESAS

获取价格

IC,SYNC SRAM,512KX16,CMOS,QFP,100PIN,PLASTIC
UPD4482163GF-A60Y NEC

获取价格

8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION DOUBLE CYCLE DESELECT
UPD4482163GF-A60Y RENESAS

获取价格

Cache SRAM, 512KX16, 3.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4482181 NEC

获取价格

8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION
UPD4482181GF-A65 NEC

获取价格

8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION
UPD4482181GF-A65-A NEC

获取价格

暂无描述
UPD4482181GF-A65Y NEC

获取价格

Cache SRAM, 512KX18, 6.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100