Datasheet > 存储 > SRAM> UPD4482182GF-A44

UPD4482182GF-A44

更新时间： 2024-11-04 22:11:51

品牌	Logo	应用领域
日电电子 - NEC		存储内存集成电路静态存储器
页数	文件大小	规格书
28页	441K
描述
8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT

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中文翻译

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技术参数
数据手册

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UPD4482182GF-A44 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	14 X 20 MM, PLASTIC, LQFP-100	Reach Compliance Code：	compliant
风险等级：	5.92	最长访问时间：	2.8 ns
其他特性：	PIPELINED ARCHITECTURE	JESD-30 代码：	R-PQFP-G100
JESD-609代码：	e0	长度：	20 mm
内存密度：	9437184 bit	内存集成电路类型：	CACHE SRAM
内存宽度：	18	功能数量：	1
端子数量：	100	字数：	524288 words
字数代码：	512000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	512KX18	封装主体材料：	PLASTIC/EPOXY
封装代码：	LQFP	封装形状：	RECTANGULAR
封装形式：	FLATPACK, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
座面最大高度：	1.7 mm	最大供电电压 (Vsup)：	3.465 V
最小供电电压 (Vsup)：	3.135 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子面层：	TIN LEAD
端子形式：	GULL WING	端子节距：	0.65 mm
端子位置：	QUAD	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	14 mm	Base Number Matches：	1

UPD4482182GF-A44 数据手册

DATA SHEET

MOS INTEGRATED CIRCUIT

PD4482162, 4482182, 4482322, 4482362

8M-BIT CMOS SYNCHRONOUS FAST SRAM

PIPELINED OPERATION

SINGLE CYCLE DESELECT

Description

The µPD4482162 is a 524,288-word by 16-bit, the µPD4482182 is a 524,288-word by 18-bit, µPD4482322 is a 262,144-

word by 32-bit and the µPD4482362 is a 262,144-word by 36-bit synchronous static RAM fabricated with advanced CMOS

technology using Full-CMOS six-transistor memory cell.

The µPD4482162, µPD4482182, µPD4482322 and µPD4482362 integrates unique synchronous peripheral circuitry, 2-

bit burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the single

clock input (CLK).

The µPD4482162, µPD4482182, µPD4482322 and µPD4482362 are suitable for applications which require synchronous

operation, high speed, low voltage, high density and wide bit configuration, such as cache and buffer memory.

ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”). In

the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal operation.

The µPD4482162, µPD4482182, µPD4482322 and µPD4482362 are packaged in 100-pin PLASTIC LQFP with a 1.4

mm package thickness for high density and low capacitive loading.

Features

• 3.3 V or 2.5 V core supply

• Synchronous operation

• Operating temperature : T_A= 0 to 70 °C (-A44, -A50, -A60, -C60)

T_A= −40 to +85 °C (-A44Y, -A50Y, -A60Y, -C60Y)

• Internally self-timed write control

• Burst read / write : Interleaved burst and linear burst sequence

• Fully registered inputs and outputs for pipelined operation

• Single-Cycle deselect timing

• All registers triggered off positive clock edge

• 3.3 V or 2.5 V LVTTL Compatible : All inputs and outputs

• Fast clock access time : 2.8 ns (225 MHz), 3.1 ns (200 MHz), 3.5 ns (167 MHz)

• Asynchronous output enable : /G

• Burst sequence selectable : MODE

• Sleep mode : ZZ (ZZ = Open or Low : Normal operation)

• Separate byte write enable : /BW1 to /BW4, /BWE (µPD4482322, µPD4482362)

/BW1, /BW2, /BWE (µPD4482162, µPD4482182)

Global write enable : /GW

• Three chip enables for easy depth expansion

• Common I/O using three state outputs

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. M14522EJ3V0DS00 (3rd edition)

Date Published December 2002 NS CP(K)

Printed in Japan

The mark shows major revised points.

2000

12 3 4 5 6 7...28

中文翻译

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与UPD4482182GF-A44相关器件

型号	品牌	获取价格	描述	数据表
UPD4482182GF-A44-A	NEC	获取价格	Cache SRAM, 512KX18, 2.8ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4482182GF-A44Y	NEC	获取价格	8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT
UPD4482182GF-A44Y-A	NEC	获取价格	Cache SRAM, 512KX18, 2.8ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4482182GF-A50	NEC	获取价格	8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT
UPD4482182GF-A50-A	NEC	获取价格	Cache SRAM, 512KX18, 3.1ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4482182GF-A50Y	NEC	获取价格	8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT
UPD4482182GF-A50Y-A	NEC	获取价格	暂无描述
UPD4482182GF-A60	NEC	获取价格	8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT
UPD4482182GF-A60-A	NEC	获取价格	Cache SRAM, 512KX18, 3.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4482182GF-A60Y	NEC	获取价格	8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT

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