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UPD44646362AF5-E33-FQ1-A PDF预览

UPD44646362AF5-E33-FQ1-A

更新时间: 2024-11-06 19:25:07
品牌 Logo 应用领域
瑞萨 - RENESAS 时钟双倍数据速率静态存储器内存集成电路
页数 文件大小 规格书
42页 786K
描述
IC,SYNC SRAM,DDR,2MX36,CMOS,BGA,165PIN,PLASTIC

UPD44646362AF5-E33-FQ1-A 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.8
最长访问时间:0.45 ns最大时钟频率 (fCLK):300 MHz
I/O 类型:COMMONJESD-30 代码:R-PBGA-B165
内存密度:75497472 bit内存集成电路类型:STANDARD SRAM
内存宽度:36端子数量:165
字数:2097152 words字数代码:2000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2MX36
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装等效代码:BGA165,11X15,40
封装形状:RECTANGULAR封装形式:GRID ARRAY
并行/串行:PARALLEL电源:1.5,1.8 V
认证状态:Not Qualified最大待机电流:0.43 A
最小待机电流:1.7 V子类别:SRAMs
最大压摆率:0.64 mA表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:BALL端子节距:1 mm
端子位置:BOTTOMBase Number Matches:1

UPD44646362AF5-E33-FQ1-A 数据手册

 浏览型号UPD44646362AF5-E33-FQ1-A的Datasheet PDF文件第2页浏览型号UPD44646362AF5-E33-FQ1-A的Datasheet PDF文件第3页浏览型号UPD44646362AF5-E33-FQ1-A的Datasheet PDF文件第4页浏览型号UPD44646362AF5-E33-FQ1-A的Datasheet PDF文件第5页浏览型号UPD44646362AF5-E33-FQ1-A的Datasheet PDF文件第6页浏览型号UPD44646362AF5-E33-FQ1-A的Datasheet PDF文件第7页 
To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  

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