Datasheet > UPD44164185AF5-E37Y-EQ2

UPD44164185AF5-E37Y-EQ2

更新时间： 2024-11-20 19:29:27

品牌	Logo	应用领域
日电电子 - NEC		双倍数据速率静态存储器内存集成电路
页数	文件大小	规格书
40页	382K
描述
DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, BGA-165

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

UPD44164185AF5-E37Y-EQ2 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	13 X 15 MM, PLASTIC, BGA-165	Reach Compliance Code：	compliant
风险等级：	5.84	Is Samacsys：	N
最长访问时间：	0.45 ns	其他特性：	PIPELINED ARCHITECTURE
JESD-30 代码：	R-PBGA-B165	JESD-609代码：	e0
长度：	15 mm	内存密度：	18874368 bit
内存集成电路类型：	DDR SRAM	内存宽度：	18
功能数量：	1	端子数量：	165
字数：	1048576 words	字数代码：	1000000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	1MX18
封装主体材料：	PLASTIC/EPOXY	封装代码：	LBGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, LOW PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified	座面最大高度：	1.51 mm
最大供电电压 (Vsup)：	1.9 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	TIN LEAD	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	13 mm
Base Number Matches：	1

UPD44164185AF5-E37Y-EQ2 数据手册

浏览型号UPD44164185AF5-E37Y-EQ2的Datasheet PDF文件第2页

浏览型号UPD44164185AF5-E37Y-EQ2的Datasheet PDF文件第3页

浏览型号UPD44164185AF5-E37Y-EQ2的Datasheet PDF文件第4页

浏览型号UPD44164185AF5-E37Y-EQ2的Datasheet PDF文件第5页

浏览型号UPD44164185AF5-E37Y-EQ2的Datasheet PDF文件第6页

DATA SHEET

MOS INTEGRATED CIRCUIT

PD44164085A, 44164095A, 44164185A, 44164365A

18M-BIT DDRII SRAM SEPARATE I/O

2-WORD BURST OPERATION

Description

The μPD44164085A is a 2,097,152-word by 8-bit, the μPD44164095A is a 2,097,152-word by 9-bit, the μPD44164185A

is a 1,048,576-word by 18-bit and the μPD44164365A is a 524,288-word by 36-bit synchronous double data rate static

RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

The μPD44164085A, μPD44164095A, μPD44164185A and μPD44164365A integrate unique synchronous peripheral

circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive

edge of K and K#.

These products are suitable for application which require synchronous operation, high speed, low voltage, high density

and wide bit configuration.

These products are packaged in 165-pin PLASTIC BGA.

Features

• 1.8 ± 0.1 V power supply

• 165-pin PLASTIC BGA package (13 x 15)

• HSTL interface

• PLL circuitry for wide output data valid window and future frequency scaling

• Separate independent read and write data ports

• DDR read or write operation initiated each cycle

• Pipelined double data rate operation

• Separate data input/output bus

• Two-tick burst for low DDR transaction size

• Two input clocks (K and K#) for precise DDR timing at clock rising edges only

• Two output clocks (C and C#) for precise flight time and clock skew matching-clock

and data delivered together to receiving device

• Internally self-timed write control

• Clock-stop capability. Normal operation is restored in 1,024 cycles after clock is resumed.

• User programmable impedance output

<R>

• Fast clock cycle time : 3.3 ns (300 MHz), 3.7 ns (270 MHz), 4.0 ns (250 MHz), 5.0 ns (200 MHz)

• Simple control logic for easy depth expansion

• JTAG boundary scan

• Operating ambient temperature: Commercial T^A= 0 to +70°C

(-E33, -E37, -E40, -E50)

Industrial T^A= –40 to +85°C (-E37Y, -E40Y, -E50Y)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. M17769EJ3V0DS00 (3rd edition)

Date Published February 2007 NS CP(N)

Printed in Japan

2006

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6 7...40

中文翻译

下载PDF

与UPD44164185AF5-E37Y-EQ2相关器件

型号	品牌	获取价格	描述	数据表
UPD44164185AF5-E37Y-EQ2-A	RENESAS	获取价格	1MX18 DDR SRAM, 0.45ns, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, BGA-165
UPD44164185AF5-E37Y-EQ2-A	NEC	获取价格	DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, BGA-165
UPD44164185AF5-E40-EQ2-A	RENESAS	获取价格	1MX18 DDR SRAM, 0.45ns, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, BGA-165
UPD44164185AF5-E40Y-EQ2	NEC	获取价格	DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, BGA-165
UPD44164185AF5-E40Y-EQ2-A	RENESAS	获取价格	1MX18 DDR SRAM, 0.45ns, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, BGA-165
UPD44164185AF5-E40Y-EQ2-A	NEC	获取价格	DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, BGA-165
UPD44164185AF5-E50-EQ2	NEC	获取价格	DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, BGA-165
UPD44164185AF5-E50-EQ2-A	RENESAS	获取价格	1MX18 DDR SRAM, 0.45ns, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, BGA-165
UPD44164185AF5-E50Y-EQ2	NEC	获取价格	DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, BGA-165
UPD44164185AF5-E50Y-EQ2-A	RENESAS	获取价格	1MX18 DDR SRAM, 0.45ns, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, BGA-165

与UPD44164185AF5-E37Y-EQ2相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

25
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

17
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

UPD44164185AF5-E37Y-EQ2

UPD44164185AF5-E37Y-EQ2 技术参数

UPD44164185AF5-E37Y-EQ2 数据手册

与UPD44164185AF5-E37Y-EQ2相关器件

与UPD44164185AF5-E37Y-EQ2相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UPD44164185AF5-E37Y-EQ2

UPD44164185AF5-E37Y-EQ2 技术参数

UPD44164185AF5-E37Y-EQ2 数据手册

与UPD44164185AF5-E37Y-EQ2相关器件

与UPD44164185AF5-E37Y-EQ2相关文章

您还可以找

您在本页遇到什么问题？