Datasheet > UPD29F064115-YEB10GZ

UPD29F064115-YEB10GZ

更新时间： 2024-11-13 23:39:51

品牌	Logo	应用领域
其他 - ETC		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
2页	482K
描述
EEPROM

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UPD29F064115-YEB10GZ 数据手册

µPD29F064115

64 Mb Flash Memory

Memory

Description

The 64 Mb µPD29F064115 flash memory with page-read function is optimized for ultra-

low-power mobile applications such as cellular telephones, personal digital assistants

(PDAs) and other portable terminals.

Specifications

Organization

4 Mwords x 16 bits

Sector architecture

142 sectors (4 Kwords x 16 sectors + 32 Kwords x 126 sectors)

Bank architecture

Power supply

4 banks (8 Mb + 24 Mb + 24 Mb + 8 Mb)

V_CC= 1.95 0.15 V or 1.65 0.15 V; V_CCQ= 3.0 0.3 V

Random access time

Page access time

85 ns* / 90 ns / 100 ns; (*V_CC= 1.95 0.15 V)

30 ns

48-pin TSOP Type I (12 mm x 20 mm)

63-ball tape FBGA (11 mm x 8 mm)

85-ball tape FBGA

Package

Features

•

V_CC=1.65 V minimum (1.8 0.15 V), one of the industry’s lowest operating voltages

High-speed page read access time of 30 ns for better performance

Dual operation with four bank architecture to enhance flexibility

Two 8 Mb banks with 4 Kwords x 8 boot sectors, combining conventional top-and

bottom-boot architectures in one product

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