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UPD29F064115-YEB90F9-CD6 PDF预览

UPD29F064115-YEB90F9-CD6

更新时间: 2024-11-13 23:39:51
品牌 Logo 应用领域
其他 - ETC 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
2页 482K
描述
EEPROM

UPD29F064115-YEB90F9-CD6 数据手册

 浏览型号UPD29F064115-YEB90F9-CD6的Datasheet PDF文件第2页 
µPD29F064115  
64 Mb Flash Memory  
Memory  
Description  
The 64 Mb µPD29F064115 flash memory with page-read function is optimized for ultra-  
low-power mobile applications such as cellular telephones, personal digital assistants  
(PDAs) and other portable terminals.  
Specifications  
Organization  
4 Mwords x 16 bits  
Sector architecture  
142 sectors (4 Kwords x 16 sectors + 32 Kwords x 126 sectors)  
Bank architecture  
Power supply  
4 banks (8 Mb + 24 Mb + 24 Mb + 8 Mb)  
VCC = 1.95 0.15 V or 1.65 0.15 V; VCCQ = 3.0 0.3 V  
Random access time  
Page access time  
85 ns* / 90 ns / 100 ns; (*VCC = 1.95 0.15 V)  
30 ns  
48-pin TSOP Type I (12 mm x 20 mm)  
63-ball tape FBGA (11 mm x 8 mm)  
85-ball tape FBGA  
Package  
Features  
VCC =1.65 V minimum (1.8 0.15 V), one of the industry’s lowest operating voltages  
High-speed page read access time of 30 ns for better performance  
Dual operation with four bank architecture to enhance flexibility  
Two 8 Mb banks with 4 Kwords x 8 boot sectors, combining conventional top-and  
bottom-boot architectures in one product  

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