SILICON RFIC LOW
CURRENT AMPLIFIER
UPC8179TB
FOR MOBILE COMMUNICATIONS
FEATURES
POWER GAIN vs. FREQUENCY
•
•
•
HIGH DENSITY SURFACE MOUNTING:
6 Pin Super Minimold Package (2.0 x 1.25 x 0.9 mm)
+20
+10
0
VCC = 3.0 V
2.4 GHz
T
A
A
= -40°C
= +25°C
SUPPLY VOLTAGE:
VCC = 2.4 to 3.3 V
T
T
A
= +85°C
HIGH EFFICIENCY:
PO(1dB) = +3.0 dBm TYP at f = 1.0 GHz
PO(1dB) = +1.5 dBm TYP at f = 1.9 GHz
PO(1dB) = +1.0 dBm TYP at f = 2.4 GHz
–10
–20
–30
–40
•
•
POWER GAIN:
GP = 13.5 dB TYP at f = 1.0 GHz
GP = 15.5 dB TYP at f = 1.9 GHz
GP = 15.5 dB TYP at f = 2.4 GHz
1.0 GHz
1.9 GHz
EXCELLENT ISOLATION:
1.0
3.0
0.1
0.3
ISL = 44 dB TYP at f = 1.0 GHz
ISL = 42 dB TYP at f = 1.9 GHz
ISL = 41 dB TYP at f = 2.4 GHz
Output match for best performance
at each frequency
•
•
•
LOW CURRENT CONSUMPTION:
ICC = 4.0 mA TYP AT VCC = 3.0 V
DESCRIPTION
OPERATING FREQUENCY:
ICC = 4.0 mA TYP AT VCC = 3.0 V
NEC's UPC8179TB is a silicon monolithic integrated circuit
designed as amplifier for mobile communications. This IC can
realize low current consumption with external chip inductor
which can be realized on internal 50Ω wideband matched IC.
Thislowcurrentamplifierunson3.0V.ThisICismanufactured
using NEC's 30 GHz fMAX UHS0 (Ultra High Speed Process)
silicon bipolar process. This process uses direct silicon nitride
passivation film and gold electrodes. These materials can
protect the chip surface from pollution and prevent corrosion/
migration. Thus this IC has exellent performance uniformity
and reliability.
LIGHT WEIGHT:
7 mg (standard Value)
APPLICATIOIN
• Buffer amplifiers for 0.1 to 2.4 GHz mobile communications
systems.
ELECTRICAL CHARACTERISTICS,
(Unless otherwise specified, TA = +25°C, VCC = VOUT = 3.0 V, ZS = ZL = 50Ω, at LC matched Frequency)
PART NUMBER
UPC8179TB
PACKAGE OUTLINE
S06
TYP
4.0
SYMBOLS
ICC
PARAMETERS AND CONDITIONS
UNITS
mA
MIN
MAX
Circuit Current (no input signal)
2.9
5.4
GP
Power Gain,
f = 1.0 GHz, PIN = -30 dBm
f = 1.9 GHz, PIN = -30 dBm
f = 2.4 GHz, PIN = -30 dBm
dB
11.0
13.0
13.0
13.5
15.5
15.5
15.5
17.5
17.5
ISOL
P1dB
NF
Isolation,
f = 1.0 GHz, PIN = -30 dBm
f = 1.9 GHz, PIN = -30 dBm
f = 2.4 GHz, PIN = -30 dBm
dB
dB
dB
dB
39.0
37.0
36.0
44.0
42.0
41.0
–
–
–
Output Power at
1 dB gain
compression,
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
-0.5
-2.0
-3.0
3.0
1.5
1.0
–
–
–
Noise Figure,
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
–
–
–
5.0
5.0
5.0
6.5
6.5
6.5
RLIN
Input Return Loss,
(without matching
circuit)
f = 1.0 GHz, PIN = -30 dBm
f = 1.9 GHz, PIN = -30 dBm
f = 2.4 GHz, PIN = -30 dBm
4.0
4.0
6.0
7.0
7.0
9.0
–
–
–
California Eastern Laboratories