Datasheet > 射频和微波 > 射频/微波放大器> UPC8181TB-E3

UPC8181TB-E3

更新时间： 2024-01-04 09:57:36

品牌	Logo	应用领域
日电电子 - NEC		射频和微波射频放大器微波放大器功率放大器输出元件通信
页数	文件大小	规格书
7页	68K
描述
3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

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中文翻译

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UPC8181TB-E3 数据手册

3 V, SILICON MMIC

MEDIUM OUTPUT POWER AMPLIFIER

FOR MOBILE COMMUNICATIONS

UPC8181TB

FEATURES

NOISE FIGURE, POWER GAIN vs.

FREQUENCY

• SUPPLY VOLTAGE:

VCC = 2.7 to 3.3 V

CC = 3.0 V

• CIRCUIT CURRENT:

ICC = 23.0 mA TYP at VCC = 3.0 V

• POWER GAIN:

GP = 19.0 dB TYP at f = 0.9 GHz

GP = 21.0 dB TYP at f = 1.9 GHz

GP = 22.0 dB TYP at f = 2.4 GHz

• MEDIUM OUTPUT POWER:

PO(1dB) = +8.0 dBm TYP at f = 0.9 GHz

PO(1dB) = +7.0 dBm TYP at f = 1.9 GHz

PO(1dB) = +7.0 dBm TYP at f = 2.4 GHz

• UPPER LIMIT OPERATING FREQUENCY:

fU = 4.0 GHz TYP at 3 dB bandwidth (Standard value)

• HIGH-DENSITY SURFACE MOUNTING:

0.1

0.3

1.0

3.0

6-pin super minimold package (2.0 x 1.25 x 0.9 mm)

Frequency, f (GHz)

APPLICATIONS

DESCRIPTION

The UPC8181TB is a silicon Monolithic Microwave Integrated

Circuit designed as an amplifier for mobile communications.

This IC operates at 3 volts. The medium output power is

suitable for RF-TX of mobile communication systems.

• Buffer amplifiers for 1.9 GHz to 2.4 GHz mobile

communication systems.

This IC is manufactured using NEC's 30 GHz fmax UHS0 (Ultra

High Speed process) silicon bipolar process. This process

uses direct silicon nitride passivation film and gold electrodes.

Thesematerialscanprotectthechipsurfacefrompollutionand

prevent corrosion/migration. This IC has excellent perfor-

mance, uniformity, and reliability.

NEC's stringent quality assurance and test procedures ensure

the highest reliability and performance.

ELECTRICAL CHARACTERISTICS

(TA = 25°C, VCC = VOUT = 3.0 V, ZS = ZL = 50Ω)

PART NUMBER

PACKAGE OUTLINE

UPC8181TB

S06

SYMBOLS

PARAMETERS AND CONDITIONS

Circuit Current (no signal)

UNITS

MIN

TYP

MAX

ICC

–

23.0

30.0

Power Gain,

f = 0.9 GHz

f = 1.9 GHz

f = 2.4 GHz

16.0

18.0

19.0

21.0

22.0

24.0

25.0

Noise Figure,

f = 0.9 GHz

f = 1.9 GHz

f = 2.4 GHz

–

4.5

6.0

Upper Limit Operating Frequency, 3 dB down below from gain at f = 0.1 GHz

GHz

–

4.0

–

ISL

Isolation,

f = 0.9 GHz

f = 1.9 GHz

f = 2.4 GHz

28.0

27.0

26.5

33.0

32.0

31.5

–

12 3 4 5 6 7

中文翻译

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与UPC8181TB-E3相关器件

型号	品牌	获取价格	描述	数据表
UPC8181TB-E3-A	CEL	获取价格	3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8182TB	NEC	获取价格	3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8182TB_1	NEC	获取价格	3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8182TB-A	NEC	获取价格	Wide Band Low Power Amplifier, 900MHz Min, 2900MHz Max, 2 X 1.25 MM, 0.90 MM HEIGHT, SUPER
UPC8182TB-E3	NEC	获取价格	3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8182TB-E3-A	RENESAS	获取价格	UPC8182TB-E3-A
UPC8182TB-E3-AZ	NEC	获取价格	3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8186K-E1	ETC	获取价格	RF MODULATOR\|BIPOLAR\|LLCC\|24PIN\|PLASTIC
UPC8187TB	NEC	获取价格	SILICON RFIC HI-IP3 FREQUENCY UP-CONVERTER FOR WIRELESS TRANSCEIVER
UPC8187TB	CEL	获取价格	SILICON RFIC HI-IP3 FREQUENCY UP-CONVERTER FOR WIRELESS TRANSCEIVER

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