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UPC8179TK-E3

更新时间： 2024-11-20 22:22:27
品牌 Logo 应用领域
日电电子 - NEC 射频和微波射频放大器微波放大器通信
页数 文件大小 规格书
6页 243K
描述
SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

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中文翻译

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UPC8179TK-E3 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：ObsoleteReach Compliance Code：compliant
风险等级：5.05Is Samacsys：N
其他特性：HIGH RELIABILITY特性阻抗：50 Ω
构造：COMPONENT增益：14 dB
最大输入功率 (CW)：5 dBmJESD-609代码：e0
最大工作频率：2400 MHz最小工作频率：100 MHz
最高工作温度：85 °C最低工作温度：-40 °C
射频/微波设备类型：WIDE BAND LOW POWER端子面层：Tin/Lead (Sn/Pb)
Base Number Matches：1

UPC8179TK-E3 数据手册

 浏览型号UPC8179TK-E3的Datasheet PDF文件第2页浏览型号UPC8179TK-E3的Datasheet PDF文件第3页浏览型号UPC8179TK-E3的Datasheet PDF文件第4页浏览型号UPC8179TK-E3的Datasheet PDF文件第5页浏览型号UPC8179TK-E3的Datasheet PDF文件第6页 
SILICON MMIC LOW  
CURRENT AMPLIFIER  
FOR MOBILE COMMUNICATIONS  
UPC8179TK  
FEATURES  
OUTLINE DIMENSIONS (Units in mm)  
•
•
•
HIGH DENSITY SURFACE MOUNTING:  
6 Pin Leadless Minimold Package (1.5 x 1.1 x 0.55 mm)  
PACKAGE OUTLINE TK  
1.3±0.05  
SUPPLY VOLTAGE:  
VCC = 2.4 to 3.3 V  
Top  
View  
Bottom  
View  
1.1±0.1  
0.1  
HIGH EFFICIENCY:  
PO(1dB) = +2.0 dBm TYP at f = 1.0 GHz  
PO(1dB) = +0.5 dBm TYP at f = 1.9 GHz  
PO(1dB) = +0.5 dBm TYP at f = 2.4 GHz  
0.2±0.1  
(0.9)  
•
•
POWER GAIN:  
GP = 13.5 dB TYP at f = 1.0 GHz  
GP = 15.5 dB TYP at f = 1.9 GHz  
GP = 16.0 dB TYP at f = 2.4 GHz  
+0.1  
-0.05  
0.11±  
DESCRIPTION  
EXCELLENT ISOLATION:  
ISL = 43 dB TYP at f = 1.0 GHz  
ISL = 42 dB TYP at f = 1.9 GHz  
ISL = 42 dB TYP at f = 2.4 GHz  
NEC's UPC8179TK is a silicon monolithic integrated circuit  
designed as an amplifier for mobile communications. This IC  
can realize low current consumption with external chip induc-  
tor. The incorporation of a chip identical to the conventional 6-  
pinsuperminimoldpackage(2.0x1.25x0.9mm)µPC8179TB  
ina6-pinleadlessminimoldpackage(1.5x1.1x0.55mm)has  
enabledareductioninmountingareaof50%. TheµPC8179TK  
is ideally suited to replace the µPC8179TB for footprint reduc-  
tion and increased design density. This IC is manufactured  
using NEC's 30 GHz fMAX UHS0 (Ultra High Speed Process)  
silicon bipolar process. This process uses direct silicon nitride  
passivation film and gold electrodes. These materials can  
protect the chip surface from pollution and prevent corrosion/  
migration. Thus this IC has excellent performance uniformity  
and reliability.  
•
•
•
LOW CURRENT CONSUMPTION:  
ICC = 4.0 mA TYP AT VCC = 3.0 V  
OPERATING FREQUENCY:  
0.1 to 2.4 GHz (Output port LC matching)  
LIGHT WEIGHT:  
3 mg  
APPLICATION  
• Buffer amplifiers for 0.1 to 2.4 GHz mobile communications  
systems.  
NEC's stringent quality assurance and test procedures assure  
the highest performance. consistency and reliability.  
ELECTRICAL CHARACTERISTICS,  
(Unless otherwise specified, TA = +25°C, VCC = VOUT = 3.0 V, ZS = ZL = 50Ω, at LC matched Frequency)  
PART NUMBER  
UPC8179TK  
PACKAGE OUTLINE  
TK  
TYP  
4.0  
SYMBOLS  
ICC  
PARAMETERS AND CONDITIONS  
UNITS  
mA  
MIN  
MAX  
Circuit Current (no input signal)  
2.9  
5.4  
GP  
Power Gain,  
f = 1.0 GHz, PIN = -30 dBm  
f = 1.9 GHz, PIN = -30 dBm  
f = 2.4 GHz, PIN = -30 dBm  
dB  
11.0  
13.0  
14.0  
13.5  
15.5  
16.0  
15.5  
17.5  
18.5  
ISOL  
P1dB  
NF  
Isolation,  
f = 1.0 GHz, PIN = -30 dBm  
f = 1.9 GHz, PIN = -30 dBm  
f = 2.4 GHz, PIN = -30 dBm  
dB  
dBm  
dB  
39.0  
37.0  
37.0  
43.0  
42.0  
42.0  
–
–
–
Output Power at  
1 dB gain  
compression,  
f = 1.0 GHz  
f = 1.9 GHz  
f = 2.4 GHz  
-0.5  
-2.0  
-3.0  
2.0  
0.5  
0.5  
–
–
–
Noise Figure,  
f = 1.0 GHz  
f = 1.9 GHz  
f = 2.4 GHz  
–
–
–
5.0  
5.0  
5.0  
6.5  
6.5  
6.5  
RLIN  
Input Return Loss,  
(without matching  
circuit)  
f = 1.0 GHz, PIN = -30 dBm  
f = 1.9 GHz, PIN = -30 dBm  
f = 2.4 GHz, PIN = -30 dBm  
dB  
4.0  
4.0  
6.0  
7.0  
7.0  
9.0  
–
–
–
California Eastern Laboratories  
123456

中文翻译

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