Datasheet > 射频和微波 > 射频/微波放大器> UPC8179TK-A

UPC8179TK-A

更新时间： 2024-11-18 12:59:11

品牌	Logo	应用领域
日电电子 - NEC		放大器通信
页数	文件大小	规格书
28页	152K
描述
Wide Band Low Power Amplifier, 100MHz Min, 2400MHz Max, 1.50 X 1.30 MM, 0.55 MM HEIGHT, LEAD FREE, LEAD-LESS MINIMOLD PACKAGE-6

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中文翻译

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技术参数
数据手册

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UPC8179TK-A 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.05	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	14 dB
最大输入功率 (CW)：	5 dBm	JESD-609代码：	e6
最大工作频率：	2400 MHz	最小工作频率：	100 MHz
最高工作温度：	85 °C	最低工作温度：	-40 °C
射频/微波设备类型：	WIDE BAND LOW POWER	端子面层：	Tin/Bismuth (Sn/Bi)
Base Number Matches：	1

UPC8179TK-A 数据手册

DATA SHEET

BIPOLAR ANALOG INTEGRATED CIRCUIT

µPC8179TB

SILICON MMIC LOW CURRENT AMPLIFIER

FOR MOBILE COMMUNICATIONS

DESCRIPTION

The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This

IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω

wideband matched IC. This low current amplifier operates on 3.0 V.

This IC is manufactured using NEC’s 30 GHz f^maxUHS0 (Ultra High Speed Process) silicon bipolar process. This

process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface

from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

•

Low current consumption

Supply voltage

I^CC= 4.0 mA TYP. @ V^CC= 3.0 V

V^CC= 2.4 to 3.3 V

High efficiency

P^{O (1 dB)}= +3.0 dBm TYP. @ f = 1.0 GHz

P^{O (1 dB)}= +1.5 dBm TYP. @ f = 1.9 GHz

P^{O (1 dB)}= +1.0 dBm TYP. @ f = 2.4 GHz

G^P= 13.5 dB TYP. @ f = 1.0 GHz

G^P= 15.5 dB TYP. @ f = 1.9 GHz

G^P= 15.5 dB TYP. @ f = 2.4 GHz

ISL = 44 dB TYP. @ f = 1.0 GHz

ISL = 42 dB TYP. @ f = 1.9 GHz

ISL = 41 dB TYP. @ f = 2.4 GHz

0.1 to 2.4 GHz (Output port LC matching)

•

Power gain

Excellent isolation

•

Operating frequency

High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)

Light weight 7 mg (Standard value)

APPLICATION

•

Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system

Caution Electro-static sensitive devices

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14730EJ2V0DS00 (2nd edition)

Date Published August 2000 N CP(K)

Printed in Japan

2000

12 3 4 5 6 7...28

中文翻译

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与UPC8179TK-A相关器件

型号	品牌	获取价格	描述	数据表
UPC8179TK-E2	NEC	获取价格	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8179TK-E2-A	CEL	获取价格	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8179TK-E2-A	NEC	获取价格	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8179TK-E3	NEC	获取价格	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC817DG-LS04-R	UTC	获取价格	Transistor Output Optocoupler,
UPC817DL-LS04-R	UTC	获取价格	Transistor Output Optocoupler,
UPC8181TB	NEC	获取价格	3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8181TB	CEL	获取价格	3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8181TB-A	NEC	获取价格	Wide Band Low Power Amplifier, 4000MHz Max, SUPER MINIMOLD, 6 PIN
UPC8181TB-E3	NEC	获取价格	3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

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