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UPC8179TK-E2-A

更新时间: 2024-10-30 03:15:39
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7页 434K
描述
SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

UPC8179TK-E2-A 数据手册

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NEC's SILICON MMIC LOW  
CURRENT AMPLIFIER  
UPC8179TK  
FOR MOBILE COMMUNICATIONS  
FEATURES  
OUTLINE DIMENSIONS (Units in mm)  
PACKAGE OUTLINE TK  
HIGH DENSITY SURFACE MOUNTING:  
6 Pin Leadless Minimold Package (1.5 x 1.1 x 0.55 mm)  
1.3 0.05  
SUPPLY VOLTAGE:  
VCC = 2.4 to 3.3 V  
1.1 0.1  
0.16 0.05  
BOTTOM  
HIGH EFFICIENCY:  
PO(1dB) = +2.0 dBm TYP at f = 1.0 GHz  
PO(1dB) = +0.5 dBm TYP at f = 1.9 GHz  
PO(1dB) = +0.5 dBm TYP at f = 2.4 GHz  
1
2
3
6
5
4
0.2 0.1  
POWER GAIN:  
0.9  
GP = 13.5 dB TYP at f = 1.0 GHz  
GP = 15.5 dB TYP at f = 1.9 GHz  
GP = 16.0 dB TYP at f = 2.4 GHz  
0.11 +0.10  
0.55 0.03  
-0.05  
EXCELLENT ISOLATION:  
ISL = 43 dB TYP at f = 1.0 GHz  
ISL = 42 dB TYP at f = 1.9 GHz  
ISL = 42 dB TYP at f = 2.4 GHz  
DESCRIPTION  
NEC's UPC8179TK is a silicon monolithic integrated circuit  
designed as an amplifier for mobile communications. This IC  
can realize low current consumption with external chip induc-  
tor. The incorporation of a chip identical to the conventional 6-  
pinsuperminimoldpackage(2.0x1.25x0.9mm)μPC8179TB  
ina6-pinleadlessminimoldpackage(1.5x1.1x0.55mm)has  
enabledareductioninmountingareaof50%. TheμPC8179TK  
is ideally suited to replace the μPC8179TB for footprint reduc-  
tion and increased design density. This IC is manufactured  
using NEC's 30 GHz fMAX UHS0 (Ultra High Speed Process)  
silicon bipolar process. This process uses direct silicon nitride  
passivation film and gold electrodes. These materials can  
protect the chip surface from pollution and prevent corrosion/  
migration. Thus this IC has excellent performance uniformity  
and reliability.  
LOW CURRENT CONSUMPTION:  
ICC = 4.0 mA TYP AT VCC = 3.0 V  
OPERATING FREQUENCY:  
0.1 to 2.4 GHz (Output port LC matching)  
LIGHT WEIGHT:  
3 mg  
APPLICATION  
• Buffer amplifiers for 0.1 to 2.4 GHz mobile communications  
systems.  
NEC's stringent quality assurance and test procedures assure  
the highest performance. consistency and reliability.  
ELECTRICAL CHARACTERISTICS,  
(Unless otherwise specified, TA = +25°C, VCC = VOUT = 3.0 V, ZS = ZL = 50Ω, at LC matched Frequency)  
PART NUMBER  
UPC8179TK  
PACKAGE OUTLINE  
TK  
TYP  
4.0  
SYMBOLS  
ICC  
PARAMETERS AND CONDITIONS  
UNITS  
mA  
MIN  
MAX  
Circuit Current (no input signal)  
2.9  
5.4  
GP  
Power Gain,  
f = 1.0 GHz, PIN = -30 dBm  
f = 1.9 GHz, PIN = -30 dBm  
f = 2.4 GHz, PIN = -30 dBm  
dB  
11.0  
13.0  
14.0  
13.5  
15.5  
16.0  
15.5  
17.5  
18.5  
ISOL  
P1dB  
NF  
Isolation,  
f = 1.0 GHz, PIN = -30 dBm  
f = 1.9 GHz, PIN = -30 dBm  
f = 2.4 GHz, PIN = -30 dBm  
dB  
dBm  
dB  
39.0  
37.0  
37.0  
43.0  
42.0  
42.0  
Output Power at  
1 dB gain  
compression,  
f = 1.0 GHz  
f = 1.9 GHz  
f = 2.4 GHz  
-0.5  
-2.0  
-3.0  
2.0  
0.5  
0.5  
Noise Figure,  
f = 1.0 GHz  
f = 1.9 GHz  
f = 2.4 GHz  
5.0  
5.0  
5.0  
6.5  
6.5  
6.5  
RLIN  
Input Return Loss,  
(without matching  
circuit)  
f = 1.0 GHz, PIN = -30 dBm  
f = 1.9 GHz, PIN = -30 dBm  
f = 2.4 GHz, PIN = -30 dBm  
dB  
4.0  
4.0  
6.0  
7.0  
7.0  
9.0  

UPC8179TK-E2-A 替代型号

型号 品牌 替代类型 描述 数据表
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