Datasheet > UPC8179TK

UPC8179TK

更新时间： 2024-11-21 04:26:51

品牌	Logo	应用领域
CEL		放大器射频微波通信
页数	文件大小	规格书
7页	434K
描述
SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

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UPC8179TK 数据手册

NEC's SILICON MMIC LOW

CURRENT AMPLIFIER

UPC8179TK

FOR MOBILE COMMUNICATIONS

FEATURES

OUTLINE DIMENSIONS ^{(Units in mm)}

PACKAGE OUTLINE TK

•

HIGH DENSITY SURFACE MOUNTING:

6 Pin Leadless Minimold Package (1.5 x 1.1 x 0.55 mm)

1.3 0.05

•

SUPPLY VOLTAGE:

VCC = 2.4 to 3.3 V

1.1 0.1

0.16 0.05

BOTTOM

HIGH EFFICIENCY:

PO(1dB) = +2.0 dBm TYP at f = 1.0 GHz

PO(1dB) = +0.5 dBm TYP at f = 1.9 GHz

PO(1dB) = +0.5 dBm TYP at f = 2.4 GHz

0.2 0.1

•

POWER GAIN:

0.9

GP = 13.5 dB TYP at f = 1.0 GHz

GP = 15.5 dB TYP at f = 1.9 GHz

GP = 16.0 dB TYP at f = 2.4 GHz

0.11 ^+0.10

0.55 0.03

-0.05

EXCELLENT ISOLATION:

ISL = 43 dB TYP at f = 1.0 GHz

ISL = 42 dB TYP at f = 1.9 GHz

ISL = 42 dB TYP at f = 2.4 GHz

DESCRIPTION

NEC's UPC8179TK is a silicon monolithic integrated circuit

designed as an amplifier for mobile communications. This IC

can realize low current consumption with external chip induc-

tor. The incorporation of a chip identical to the conventional 6-

pinsuperminimoldpackage(2.0x1.25x0.9mm)μPC8179TB

ina6-pinleadlessminimoldpackage(1.5x1.1x0.55mm)has

enabledareductioninmountingareaof50%. TheμPC8179TK

is ideally suited to replace the μPC8179TB for footprint reduc-

tion and increased design density. This IC is manufactured

using NEC's 30 GHz fMAX UHS0 (Ultra High Speed Process)

silicon bipolar process. This process uses direct silicon nitride

passivation film and gold electrodes. These materials can

protect the chip surface from pollution and prevent corrosion/

migration. Thus this IC has excellent performance uniformity

and reliability.

•

LOW CURRENT CONSUMPTION:

ICC = 4.0 mA TYP AT VCC = 3.0 V

OPERATING FREQUENCY:

0.1 to 2.4 GHz (Output port LC matching)

LIGHT WEIGHT:

3 mg

APPLICATION

• Buffer amplifiers for 0.1 to 2.4 GHz mobile communications

systems.

NEC's stringent quality assurance and test procedures assure

the highest performance. consistency and reliability.

ELECTRICAL CHARACTERISTICS,

(Unless otherwise specified, TA = +25°C, VCC = VOUT = 3.0 V, ZS = ZL = 50Ω, at LC matched Frequency)

PART NUMBER

UPC8179TK

PACKAGE OUTLINE

TYP

4.0

SYMBOLS

ICC

PARAMETERS AND CONDITIONS

UNITS

MIN

MAX

Circuit Current (no input signal)

2.9

5.4

Power Gain,

f = 1.0 GHz, PIN = -30 dBm

f = 1.9 GHz, PIN = -30 dBm

f = 2.4 GHz, PIN = -30 dBm

11.0

13.0

14.0

13.5

15.5

16.0

15.5

17.5

18.5

ISOL

P1dB

Isolation,

f = 1.0 GHz, PIN = -30 dBm

f = 1.9 GHz, PIN = -30 dBm

f = 2.4 GHz, PIN = -30 dBm

dBm

39.0

37.0

43.0

42.0

–

Output Power at

1 dB gain

compression,

f = 1.0 GHz

f = 1.9 GHz

f = 2.4 GHz

-0.5

-2.0

-3.0

2.0

0.5

–

Noise Figure,

f = 1.0 GHz

f = 1.9 GHz

f = 2.4 GHz

–

5.0

6.5

RLIN

Input Return Loss,

(without matching

circuit)

f = 1.0 GHz, PIN = -30 dBm

f = 1.9 GHz, PIN = -30 dBm

f = 2.4 GHz, PIN = -30 dBm

4.0

6.0

7.0

9.0

–

12 3 4 5 6 7

中文翻译

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与UPC8179TK相关器件

型号	品牌	获取价格	描述	数据表
UPC8179TK-A	NEC	获取价格	Wide Band Low Power Amplifier, 100MHz Min, 2400MHz Max, 1.50 X 1.30 MM, 0.55 MM HEIGHT, LE
UPC8179TK-E2	NEC	获取价格	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8179TK-E2-A	CEL	获取价格	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8179TK-E2-A	NEC	获取价格	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8179TK-E3	NEC	获取价格	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC817DG-LS04-R	UTC	获取价格	Transistor Output Optocoupler,
UPC817DL-LS04-R	UTC	获取价格	Transistor Output Optocoupler,
UPC8181TB	NEC	获取价格	3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8181TB	CEL	获取价格	3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8181TB-A	NEC	获取价格	Wide Band Low Power Amplifier, 4000MHz Max, SUPER MINIMOLD, 6 PIN

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