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UPC8112T-E3 PDF预览

UPC8112T-E3

更新时间： 2024-02-10 04:10:25
品牌 Logo 应用领域
其他 - ETC 模拟IC电信集成电路光电二极管
页数 文件大小 规格书
4页 45K
描述
Analog IC

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UPC8112T-E3 技术参数

生命周期：Obsolete零件包装代码：SOIC
包装说明：LSSOP,针数：6
Reach Compliance Code：unknownHTS代码：8542.39.00.01
风险等级：5.63Is Samacsys：N
JESD-30 代码：R-PDSO-G6长度：2.9 mm
功能数量：1端子数量：6
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：LSSOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
认证状态：Not Qualified座面最大高度：1.4 mm
标称供电电压：3 V表面贴装：YES
技术：BIPOLAR电信集成电路类型：RF AND BASEBAND CIRCUIT
温度等级：INDUSTRIAL端子形式：GULL WING
端子节距：0.95 mm端子位置：DUAL
宽度：1.5 mmBase Number Matches：1

UPC8112T-E3 数据手册

 浏览型号UPC8112T-E3的Datasheet PDF文件第2页浏览型号UPC8112T-E3的Datasheet PDF文件第3页浏览型号UPC8112T-E3的Datasheet PDF文件第4页 
3 V SILICON MMIC L-BAND  
FREQUENCY DOWN CONVERTER  
UPC8112T  
INTERNAL BLOCK DIAGRAM  
FEATURES  
•
BROADBAND OPERATION:  
RF Input: 800 - 2000 MHz  
IF Output: 100 - 300 MHz  
IF  
Output  
RF  
Input  
•
•
•
•
•
•
INPUT IP3: -7 dBm  
LOW VOLTAGE OPERATION: 2.7~3.3 V  
LOW CURRENT CONSUMPTION: 8.5 mA  
POWER SAVE FUNCTION  
POWER  
SAVE  
SUPER SMALL T06 PACKAGE  
TAPE AND REEL PACKAGING OPTION AVAILABLE  
LO  
GND  
VCC  
Input  
DESCRIPTION  
The UPC8112T is a silicon Monolithic Microwave Integrated  
Circuit which is manufactured using the NESAT III process.  
The NESAT III process produces transistors with fT approach-  
ing 20 GHz. This device consists of a double balance mixer, an  
IF amplifier, and a LO buffer amplifier. The device was de-  
signed to be used as the first down converter for GPS and  
wirelesscommunicationssuchascellular,PCS,and900MHz  
cordlessphones.Operatingona3voltsupply,thisICisideally  
suited for hand held portable designs.  
NEC's stringent quality assurance and test procedures as-  
sure the highest reliability and performance.  
ELECTRICAL CHARACTERISTICS (TA = 25 °C, VCC = VPS = 3.0 V, PLOin = -10 dBm, ZL = ZS = 50 Ω unless otherwise specified )  
PART NUMBER  
UPC8112T  
PACKAGE OUTLINE  
T06  
SYMBOLS  
ICC  
PARAMETERS AND CONDITIONS  
UNITS  
mA  
MIN  
TYP  
MAX  
11.7  
0.1  
Circuit Current (no input signal)  
4.9  
8.5  
ICC (PS)  
fRFin  
Circuit Current at Power Save Mode, VCC = 3.0 V, VPS = 0.5 V  
µA  
RF Frequency Response  
IF Frequency Response1  
GHz  
MHz  
0.8  
100  
11.5  
1.9  
2.0  
fIFout  
250  
300  
17.5  
CG  
Conversion Gain  
fRFin = 900 MHz, fLOin = 1000 MHz  
fRFin = 1.5 GHz, fLOin = 1.6 GHz  
fRFin = 1.9 GHz, fLOin = 1.66 GHz  
dB  
dB  
dB  
15  
13  
13  
9.5  
15.5  
NF  
Single Side Band Noise Figure (SSB)  
fRFin = 900 MHz, fLOin = 1000 MHz  
dB  
dB  
dB  
9.0  
11  
11.2  
11  
fRFin = 1.5 GHz, fLOin = 1.6 GHz  
fRFin = 1.9 GHz, fLOin = 1.66 GHz  
13.2  
P1dB  
PSAT  
Output Power at 1 dB gain compression, fRFin = 1.9 GHz  
fLOin = 1.66 GHz  
dBm  
-5  
Saturated Output Power  
fRFin = 900 MHz, fLOin = 1000 MHz  
fRFin = 1.9 GHz, fLOin = 1.66 GHz  
(PRFin = -10 dBm)  
dBm  
dBm  
-6.5  
-7  
-2.5  
-3  
IIP3  
Input 3rd Order Intercept Point,  
fRFIN = 900 MHz, fLOIN = 1000 MHz  
dBm  
dBm  
dBm  
-10  
-9  
-7  
fRFin = 1.5 GHz, fLOin = 1.6 GHz  
fRFin = 1.9 GHz, fLOin = 1.66 GHz  
LORF  
LOIF  
LO Leakage at RF pin, fRFin = 900 MHz, fLOin = 1000 MHz  
fRFin = 1.5 GHz, fLOin = 1.6 GHz  
dBm  
dBm  
dBm  
-45  
-46  
-45  
fRFin = 1.9 GHz, fLOin = 1.66 GHz  
LO Leakage at IF pin, fRFin = 900 MHz, fLOin = 1000 MHz  
fRFin = 1.5 GHz, fLOin = 1.6 GHz  
dBm  
dBm  
dBm  
-32  
-33  
-30  
fRFin = 1.9 GHz, fLOin = 1.66 GHz  
RFLO  
RF Leakage at LO Pin fRFin = 900 MHz, fLOin = 1000 MHz2  
fRFin = 1.5 GHz, fLOin = 1.6 GHz2  
dBm  
dBm  
dBm  
-80  
-57  
-55  
fRFin = 1.9 GHz, fLOin = 1.66 GHz2  
Notes:  
1. External matching required.  
2. PRFin = -30 dBm  
California Eastern Laboratories  
1234

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