Datasheet > UPC8112T-E3

UPC8112T-E3

更新时间： 2024-11-17 23:39:43

品牌	Logo	应用领域
其他 - ETC		模拟IC 电信集成电路光电二极管
页数	文件大小	规格书
4页	45K
描述
Analog IC

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UPC8112T-E3 数据手册

3 V SILICON MMIC L-BAND

FREQUENCY DOWN CONVERTER

UPC8112T

INTERNAL BLOCK DIAGRAM

FEATURES

•

BROADBAND OPERATION:

RF Input: 800 - 2000 MHz

IF Output: 100 - 300 MHz

Output

Input

•

INPUT IP3: -7 dBm

LOW VOLTAGE OPERATION: 2.7~3.3 V

LOW CURRENT CONSUMPTION: 8.5 mA

POWER SAVE FUNCTION

POWER

SAVE

SUPER SMALL T06 PACKAGE

TAPE AND REEL PACKAGING OPTION AVAILABLE

GND

VCC

Input

DESCRIPTION

The UPC8112T is a silicon Monolithic Microwave Integrated

Circuit which is manufactured using the NESAT III process.

The NESAT III process produces transistors with fT approach-

ing 20 GHz. This device consists of a double balance mixer, an

IF amplifier, and a LO buffer amplifier. The device was de-

signed to be used as the first down converter for GPS and

wirelesscommunicationssuchascellular,PCS,and900MHz

cordlessphones.Operatingona3voltsupply,thisICisideally

suited for hand held portable designs.

NEC's stringent quality assurance and test procedures as-

sure the highest reliability and performance.

ELECTRICAL CHARACTERISTICS ^(TA = 25 °C, VCC = VPS = 3.0 V, PLOin = -10 dBm, ZL = ZS = 50 Ω unless otherwise specified )

PART NUMBER

UPC8112T

PACKAGE OUTLINE

T06

SYMBOLS

ICC

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

11.7

0.1

Circuit Current (no input signal)

4.9

8.5

ICC (PS)

fRFin

Circuit Current at Power Save Mode, VCC = 3.0 V, VPS = 0.5 V

µA

RF Frequency Response

IF Frequency Response¹

GHz

MHz

0.8

100

11.5

1.9

2.0

fIFout

250

300

17.5

Conversion Gain

fRFin = 900 MHz, fLOin = 1000 MHz

fRFin = 1.5 GHz, fLOin = 1.6 GHz

fRFin = 1.9 GHz, fLOin = 1.66 GHz

9.5

15.5

Single Side Band Noise Figure (SSB)

fRFin = 900 MHz, fLOin = 1000 MHz

9.0

11.2

fRFin = 1.5 GHz, fLOin = 1.6 GHz

fRFin = 1.9 GHz, fLOin = 1.66 GHz

13.2

P1dB

PSAT

Output Power at 1 dB gain compression, fRFin = 1.9 GHz

fLOin = 1.66 GHz

dBm

-5

Saturated Output Power

fRFin = 900 MHz, fLOin = 1000 MHz

fRFin = 1.9 GHz, fLOin = 1.66 GHz

(PRFin = -10 dBm)

dBm

-6.5

-7

-2.5

-3

IIP3

Input 3rd Order Intercept Point,

fRFIN = 900 MHz, fLOIN = 1000 MHz

dBm

-10

-9

-7

fRFin = 1.5 GHz, fLOin = 1.6 GHz

fRFin = 1.9 GHz, fLOin = 1.66 GHz

LORF

LOIF

LO Leakage at RF pin, fRFin = 900 MHz, fLOin = 1000 MHz

fRFin = 1.5 GHz, fLOin = 1.6 GHz

dBm

-45

-46

-45

fRFin = 1.9 GHz, fLOin = 1.66 GHz

LO Leakage at IF pin, fRFin = 900 MHz, fLOin = 1000 MHz

fRFin = 1.5 GHz, fLOin = 1.6 GHz

dBm

-32

-33

-30

fRFin = 1.9 GHz, fLOin = 1.66 GHz

RFLO

RF Leakage at LO Pin fRFin = 900 MHz, fLOin = 1000 MHz²

fRFin = 1.5 GHz, fLOin = 1.6 GHz²

dBm

-80

-57

-55

fRFin = 1.9 GHz, fLOin = 1.66 GHz²

Notes:

1. External matching required.

2. PRFin = -30 dBm

California Eastern Laboratories

12 3 4

中文翻译

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与UPC8112T-E3相关器件

型号	品牌	获取价格	描述	数据表
UPC8116GR	NEC	获取价格	500 MHz AM/ASK RECEIVER IC
UPC8116GR-E1	NEC	获取价格	500 MHz AM/ASK RECEIVER IC
UPC8119T	NEC	获取价格	VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE
UPC8119T	CEL	获取价格	NECs VARIABLE GAIN AMPLIFIER
UPC8119T_02	NEC	获取价格	1.9 GHz AGC AMPLIFIER
UPC8119T-A	NEC	获取价格	Wide Band Low Power Amplifier, 100MHz Min, 1920MHz Max, MINIMOLD, 6 PIN
UPC8119T-E3	NEC	获取价格	VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE
UPC8119T-E3-A	NEC	获取价格	Wide Band Low Power Amplifier, 100MHz Min, 1920MHz Max, MINIMOLD, 6 PIN
UPC811C	NEC	获取价格	Operational Amplifier, 1 Func, 2500uV Offset-Max, BIPolar, PDIP8, 0.300 INCH, PLASTIC, DIP
UPC811G2	RENESAS	获取价格	High Stability, Low Offset Voltage J-FET Input Operational Amplifier

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