Datasheet > UPC8120T-E3-A

UPC8120T-E3-A

更新时间： 2024-09-30 21:19:07

品牌	Logo	应用领域
日电电子 - NEC		射频微波
页数	文件大小	规格书
50页	582K
描述
Wide Band Low Power Amplifier, 100MHz Min, 1920MHz Max, MINIMOLD, 6 PIN

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UPC8120T-E3-A 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.72
其他特性：	HIGH RELIABILITY	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	10.5 dB
JESD-609代码：	e6	最大工作频率：	1920 MHz
最小工作频率：	100 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	WIDE BAND LOW POWER
端子面层：	Tin/Bismuth (Sn/Bi)	Base Number Matches：	1

UPC8120T-E3-A 数据手册

DATA SHEET

BIPOLAR ANALOG INTEGRATED CIRCUITS

µPC8119T, µPC8120T

VARIABLE GAIN AMPLIFIER SILICON MMIC

FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION

The µPC8119T and µPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to

100 MHz to 1.92 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two

types of gain control let users choose in accordance with system design. 3 V supply voltage and mini mold package

contribute to make system lower voltage, decreased space and fewer components.

The µPC8119T and µPC8120T are manufactured using our 20 GHz fT NESAT III silicon bipolar process. This process

uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution

and prevent corrosion / migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

•

Recommended operating frequency : f = 100 MHz to 1.92 GHz

Supply voltage

: V^CC= 2.7 to 3.3 V

Low current consumption

Gain control voltage

Two types of gain control

: I^CC= 11 mA TYP. @ VCC = 3.0 V

: V^AGC= 0.6 to 2.4 V (recommended)

: µPC8119T ; V^AGCup vs. Gain down (Forward control)

: µPC8120T ; VAGC up vs. Gain up

AGC control can be constructed by external control circuit

High-density surface mounting : 6-pin minimold package

(Reverse control)

APPLICATIONS

•

1.9 GHz cordless telephone (PHS base-station and so on)

800 MHz to 900 MHz or 1.5 GHz Digital cellular telephone (PDC 800 MHz, PDC 1.5 GHz and so on)

ORDERING INFORMATION

Part Number

Package

Marking

C2M

Supplying Form

• Embossed tape 8 mm wide

VAGC up vs. Gain

down

µPC8119T-E3

6-pin minimold

• 1, 2, 3 pins face to perforation side of the tape

• Qty 3 kpcs/reel

µPC8120T-E3

C2N

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: µPC8119T, µPC8120T

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10413EJ01V0DS (1st edition)

(Previous No. P11027EJ2V0DS00)

Date Published October 2003 CP(K)

The mark shows major revised points.



NEC Compound Semiconductor Devices 1996, 2003

Printed in Japan

12 3 4 5 6 7...50

中文翻译

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与UPC8120T-E3-A相关器件

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UPC8125	NEC	获取价格	UP-CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION S
UPC8125GR	NEC	获取价格	900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS
UPC8125GR_99	NEC	获取价格	SILICON MMIC UPCONVERTER WITH AGC + IQ MODULATOR
UPC8125GR-E1	NEC	获取价格	SILICON MMIC UPCONVERTER WITH AGC + IQ MODULATOR
UPC8126GR	NEC	获取价格	UP-CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION S
UPC8126GR-E1	ETC	获取价格	RF Modulator
UPC8126K	NEC	获取价格	900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS
UPC8126K-E1	NEC	获取价格	900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS
UPC8128TA	NEC	获取价格	SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES
UPC8128TA-E3	NEC	获取价格	SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

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