UPC8128TA-E3

更新时间： 2024-01-24 16:35:51

品牌	Logo	应用领域
日电电子 - NEC		放大器无绳技术蜂窝电话
页数	文件大小	规格书
16页	138K
描述
SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

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中文翻译

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数据手册

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UPC8128TA-E3 数据手册

PRELIMINARY DATA SHEET

BIPOLAR ANALOG INTEGRATED CIRCUITS

PPC8128TA, PPC8151TA, PPC8152TA

SILICON MMIC LOW CURRENT AMPLIFIERS

FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION

The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer

amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip

inductor (example: 1005 size) which can not be realized on internal 50 : wideband matched IC. These low current

amplifiers operate on 3.0 V.

These ICs are manufactured using NEC’s 20 GHz f^TNESAT™ III silicon bipolar process. This process uses

silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution

and prevent corrosion/migration. Thus, these ICs have excellent performance, uniformity and reliability.

FEATURES

•

Low current consumption

: PPC8128TA

PPC8151TA

PPC8152TA

; I^CC= 2.8 mA TYP. @ V^CC= 3.0 V

; I^CC= 4.2 mA TYP. @ V^CC= 3.0 V

; I^CC= 5.6 mA TYP. @ V^CC= 3.0 V

•

Supply voltage

High efficiency

: V^CC= 2.4 to 3.3 V

: PPC8128TA

PPC8151TA

; P^{O (1 dB)}= ð4.0 dBm TYP. @ f = 1 GHz

; P^{O (1 dB)}= +2.5 dBm TYP. @ f = 1 GHz

; P^{O (1 dB)}= ð4.5 dBm TYP. @ f = 1 GHz

PPC8152TA

•

Power gain variation

: PPC8128TA, 8151TA ; G^P= 12.5 dB TYP. @ f = 1 GHz

PPC8152TA

; G^P= 23.0 dB TYP. @ f = 1 GHz

: 100 to 1 900 MHz (Output port LC matching)

•

Operating frequency

Excellent isolation

: PPC8128TA

: PPC8151TA

: PPC8152TA

; ISL = 39 dB TYP. @ f = 1 GHz

; ISL = 38 dB TYP. @ f = 1 GHz

; ISL = 40 dB TYP. @ f = 1 GHz

APPLICATION

•

Buffer Amplifiers on 800 to 1 900 MHz cellular / cordless telephones

Caution Electro-static sensitive devices

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14637EJ1V0DS00 (1st edition)

Date Published April 2000 N CP(K)

Printed in Japan

2000

12 3 4 5 6 7...16

中文翻译

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与UPC8128TA-E3相关器件

型号	品牌	获取价格	描述	数据表
UPC8128TB	NEC	获取价格	SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES
UPC8128TB-A	NEC	获取价格	Wide Band Low Power Amplifier, 100MHz Min, 1900MHz Max, SUPER MINIMOLD, 6 PIN
UPC8128TB-E3	NEC	获取价格	SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES
UPC8128TB-E3	CEL	获取价格	Wide Band Low Power Amplifier, 100MHz Min, 1900MHz Max, SOT-363, 6 PIN
UPC8128TB-E3-A	NEC	获取价格	Wide Band Low Power Amplifier, 100MHz Min, 1900MHz Max, SUPER MINIMOLD, 6 PIN
UPC8129GR	NEC	获取价格	900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS
UPC8129GR-E1	NEC	获取价格	UP CONVERTER WITH AGC FUNCTION + QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION
UPC812C	NEC	获取价格	DUAL J-FET INPUT LOW-OFFSET OPRERATIONAL AMPLIFIER
UPC812C-A	NEC	获取价格	Operational Amplifier, 2 Func, 3000uV Offset-Max, BIPolar, PDIP8, 0.300 INCH, PLASTIC, DIP
UPC812G2	RENESAS	获取价格	DUAL OP-AMP, 5000uV OFFSET-MAX, 4MHz BAND WIDTH, PDSO8, 0.225 INCH, PLASTIC, SOP-8

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