Datasheet > UPA828TD-A

UPA828TD-A

更新时间： 2024-01-26 03:52:34

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
8页	81K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, LEAD FREE, LEADLESS, MINIMOLD, M16, 1208, 6 PIN

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技术参数
数据手册

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UPA828TD-A 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	SMALL OUTLINE, R-PDSO-F6	针数：	6
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.25	最大集电极电流 (IC)：	0.03 A
基于收集器的最大容量：	0.8 pF	集电极-发射极最大电压：	3 V
配置：	SEPARATE, 2 ELEMENTS	最高频带：	L BAND
JESD-30 代码：	R-PDSO-F6	JESD-609代码：	e6
元件数量：	2	端子数量：	6
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	TIN BISMUTH
端子形式：	FLAT	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	11000 MHz
Base Number Matches：	1

UPA828TD-A 数据手册

μPA828TD

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

5.0

3.0

Note

Total Power Dissipation

Ptot

90 in 1 element

180 in 2 elements

150

Junction Temperature

Storage Temperature

°C

Tstg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PCB

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter

DC Characterstics

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

ICBO

IEBO

VCB = 5 V, IE = 0 mA

−

100

140

−

VEB = 1 V, IC = 0 mA

VCE = 2 V, IC = 20 mA

Note 1

hFE

RF Characterstics

Gain Bandwidth Product (1)

Gain Bandwidth Product (2)

Insertion Power Gain (1)

Insertion Power Gain (2)

Noise Figure (1)

VCE = 1 V, IC = 10 mA, f = 2 GHz

VCE = 2 V, IC = 20 mA, f = 2 GHz

VCE = 1 V, IC = 10 mA, f = 2 GHz

VCE = 2 V, IC = 20 mA, f = 2 GHz

7.0

9.0

6.0

7.0

−

9.0

11.0

7.5

−

GHz

⏐S21e⏐²

−

8.5

−

V^CE= 1 V, IC = 3 mA, f = 2 GHz,

Z^S= Zopt

1.3

2.0

V^CE= 2 V, IC = 3 mA, f = 2 GHz,

Z^S= Zopt

Noise Figure (2)

−

1.3

2.0

Note 2

Reverse Transfer Capacitance

hFE Ratio

Cre

VCB = 2 V, IE = 0 mA, f = 1 MHz

V^CE= 2 V, IC = 20 mA,

h^FE1: Smaller value of Q1 and Q2,

h^FE2: Larger value of Q1 and Q2

−

0.4

0.8

hFE1/hFE2

0.85

−

Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded.

hFE CLASSIFICATION

Rank

Marking

hFE Value

70 to 140

Data Sheet PU10402EJ03V0DS

123 4 5 6 7 8

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