UPA677TB-A

更新时间： 2024-09-15 13:01:31

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管场效应晶体管光电二极管
页数	文件大小	规格书
6页	61K
描述
Small Signal Field-Effect Transistor, 0.35A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SSP, SC-88, 6 PIN

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UPA677TB-A 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	SSP, SC-88, 6 PIN	Reach Compliance Code：	compliant
风险等级：	5.72	配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V	最大漏极电流 (ID)：	0.35 A
最大漏源导通电阻：	0.6 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G6	元件数量：	2
端子数量：	6	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	10
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

UPA677TB-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA677TB

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

The µPA677TB is a switching device which can be driven

directly by a 2.5 V power source.

The µPA677TB features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such as

power switch of portable machine and so on.

PACKAGE DRAWING (Unit: mm)

+0.1

-0

+0.1

-0.05

0.2

0.15

0 to 0.1

FEATURES

• 2.5 V drive available

• Low on-state resistance

R^DS(on)1= 0.57 Ω MAX. (V^GS= 4.5 V, I^D= 0.30 A)

R^DS(on)2= 0.60 Ω MAX. (V^GS= 4.0 V, I^D= 0.30 A)

R^DS(on)3= 0.88 Ω MAX. (V^GS= 2.5 V, I^D= 0.15 A)

• Two MOS FET circuits in same size package as SC-70

0.7

0.65 0.65

0.9 ±0.1

1.3

2.0 ±0.2

ORDERING INFORMATION

PART NUMBER

PACKAGE

µPA677TB

SC-88 (SSP)

Marking: WA

PIN CONNECTUON (Top View)

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

Drain Current (pulse) ^Note1

Total Power Dissipation(2units) ^Note2

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T

±12

±0.35

±1.40

0.2

1: Source 1

2: Gate 1

3: Drain 2

4: Source 2

5: Gate 2

6: Drain 1

°C

Channel Temperature

Tch

150

Storage Temperature

Tstg

−55 to +150

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on FR-4 Board of 2500 mm²x 1.1 mm 2units total.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with

caution for electrostatic discharge.

V^ESD= ±200 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G16598EJ1V0DS00 (1st edition)

Date Published March 2003 NS CP(K)

Printed in Japan

2003

12 3 4 5 6

中文翻译

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与UPA677TB-A相关器件

型号	品牌	获取价格	描述	数据表
UPA677TB-T1-A	RENESAS	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA678TB	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA678TB-A	NEC	获取价格	暂无描述
UPA679TB	NEC	获取价格	N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA679TB-A	NEC	获取价格	Small Signal Field-Effect Transistor, 0.35A I(D), 20V, 2-Element, N-Channel and P-Channel,
UPA67C	NEC	获取价格	微型打印机驱动程序的NPN硅外延达林顿晶体管阵列
UPA68H	NEC	获取价格	Small Signal Field-Effect Transistor, 0.03A I(D), 2-Element, N-Channel, Silicon, Junction
UPA68HK	NEC	获取价格	Small Signal Field-Effect Transistor, 0.03A I(D), 2-Element, N-Channel, Silicon, Junction
UPA68HL	NEC	获取价格	Small Signal Field-Effect Transistor, 0.03A I(D), 2-Element, N-Channel, Silicon, Junction
UPA68HM	NEC	获取价格	Small Signal Field-Effect Transistor, 0.03A I(D), 2-Element, N-Channel, Silicon, Junction

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