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UPA677TB-T1-A PDF预览

UPA677TB-T1-A

更新时间: 2024-11-04 12:02:43
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体开关小信号场效应晶体管
页数 文件大小 规格书
8页 188K
描述
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

UPA677TB-T1-A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Contact Manufacturer零件包装代码:SSP
包装说明:,针数:6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.75Is Samacsys:N
最大漏极电流 (Abs) (ID):0.35 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高工作温度:150 °C峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.2 W
子类别:FET General Purpose Power表面贴装:YES
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

UPA677TB-T1-A 数据手册

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To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  

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