UPA678TB

更新时间： 2024-09-14 22:38:55

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管场效应晶体管开关
页数	文件大小	规格书
6页	63K
描述
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

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UPA678TB 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µ PA678TB

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The µ PA678TB is a switching device, which can be driven

directly by a 2.5 V power source.

The µ PA678TB features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such as

power switch of portable machine and so on.

+0.1

-0

+0.1

-0.05

0.2

0.15

0 to 0.1

FEATURES

• 2.5 V drive available

• Low on-state resistance

R^DS(on)1= 1.45 Ω MAX. (V^GS= −4.5 V, I^D= −0.20 A)

R^DS(on)2= 1.55 Ω MAX. (V^GS= −4.0 V, I^D= −0.20 A)

R^DS(on)3= 2.98 Ω MAX. (V^GS= −2.5 V, I^D= −0.15 A)

• Two MOS FET circuits in same size package as SC-70

0.7

0.65 0.65

0.9 ±0.1

1.3

2.0 ±0.2

ORDERING INFORMATION

PART NUMBER

PACKAGE

µ PA678TB

SC-88 (SSP)

Marking: XA

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

PIN CONNECTION (Top View)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

Drain Current (pulse) ^Note1

Total Power Dissipation (2 units) ^Note2

Channel Temperature

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T

−20

m12

m0.25

m1.00

0.2

1. Source 1

2. Gate 1

3. Drain 2

4. Source 2

5. Gate 2

6. Drain 1

°C

T^ch

150

Storage Temperature

T^stg

–55 to +150

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on FR-4 board of 2500 mm²x 1.1 mm

Caution This product is electrostatic-sensitive device due to low ESD capability and

shoud be handled with caution for electrostatic discharge.

V^ESD= ±100 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G16607EJ1V0DS00 (1st edition)

Date Published February 2003 NS CP(K)

Printed in Japan

2003

12 3 4 5 6

中文翻译

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