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UNR92A2J PDF预览

UNR92A2J

更新时间： 2024-02-11 07:49:09
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
2页 322K
描述
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI3-F1, 3 PIN

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UNR92A2J 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.84其他特性：BUILT IN BIAS RESISTOR IS 1
最大集电极电流 (IC)：0.08 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：60
JESD-30 代码：R-PDSO-F3JESD-609代码：e6
湿度敏感等级：1元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子面层：Tin/Bismuth (Sn/Bi)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：150 MHzBase Number Matches：1

UNR92A2J 数据手册

 浏览型号UNR92A2J的Datasheet PDF文件第2页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Transistors with built-in Resistor  
UNR92A2J  
Silicon NPN epitaxial planar type  
For digital circuits  
Unit: mm  
+0.05  
1.60  
−0.03  
+0.03  
Features  
0.12  
−0.01  
1.00 0.05  
3
Optimum for high-density mounting and downsizing of the equipment  
Contribute to low power consumption  
1
2
0.27 0
Absolute Maximum Ratings Ta = 25°C  
.50)(0.50)  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
Unit  
V
50  
5
5°  
V
mA  
mW  
°C  
Total power dissipation  
P
125  
Junction temperature  
Tj  
125  
1: Base  
2: Emitter  
Storage temperature  
T
stg  
–55 t+125  
°C  
3: Collecter  
SSMini3-F1 Package  
Marking Symbol: FL  
Internal Connection  
R1  
C
E
B
R2  
Electical Chstics Ta = 25°C±3°C  
Symbol  
Conditions  
Min  
50  
Typ  
Max  
Unit  
V
Collector-base voltagr open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Output voltage high-level  
VCBO IC = 10 mA, IE = 0  
VCEO IC = 2 mA, IB = 0  
50  
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = 50 V, IE = 0  
VCE = 50 V, IB = 0  
VEB = 6 V, IC = 0  
0.1  
0.5  
0.2  
mA  
mA  
mA  
VCE = 10 V, IC = 5 mA  
60  
V
VCE(sat) IC = 10 mA, IB = 0.3 mA  
0.25  
VOH  
VOL  
R1  
VCC = 5 V, VB = 0.5 V, RL = 1 kW  
4.9  
V
Output voltage low-level  
VCC = 5 V, VB = 2.5 V, RL = 1 kW  
0.2  
+30%  
1.2  
V
Input resistance  
—30%  
22  
1.0  
150  
kW  
Resistance ratio  
R1 / R2  
fT  
0.8  
Transition frequency  
VCB = 10 V, IE = —2 mA, f = 200 MHz  
MHz  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: March 2007  
SJH00144AED  
1
12

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