Datasheet > UNRF1A3

UNRF1A3

更新时间： 2024-11-25 23:39:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	82K
描述
Composite Device - Transistors with built-in Resistor

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中文翻译

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UNRF1A3 数据手册

Transistors with built-in Resistor

UNRF1A3

Silicon PNP epitaxial planar transistor

Unit: mm

For digital circuits

■ Features

• Suitable for high density package and downsizing of the equipment

for Ultraminiature leadless package

0.6 mm × 1.0 mm (height 0.50 mm)

+0.01

0.39

1.00 0.0ꢀ

−0.03

0.2ꢀ 0.0ꢀ

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

V_CBO

V_CEO

I_C

Rating

−50

Unit

0.6ꢀ 0.01

0.0ꢀ 0.03

Rating

Collector to base voltage

Collector to emitter voltage

−50

1: Base

2: Emitter

3: Collector

element Collector current

Overall Total power dissipation

Junction temperature

−80

°C

P_T

100

ML3-N2 Package

T_j

125

Marking Symbol: 1B

Internal Connection

Storage temperature

T_stg

−55 to +125

°C

R₁(47 kΩ)

R₂

(47 kΩ)

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Collector to base voltage

Collector to emittter voltage

Collector cutoff current

Symbol

V_CBO

V_CEO

I_CBO

I_CEO

Conditions

Min

−50

Typ

Max

Unit

I_C= −10 µA, I_E= 0

I_C= −2 mA, I_B= 0

V_CB= −50 V, I_E= 0

V_CE= −50 V, I_B= 0

V_EB= −6 V, I_C= 0

− 0.1

− 0.5

− 0.1

µA

Emitter cutoff current

I_EBO



Forward current transfer ratio

Collector to emitter saturation voltage

High level output voltage

Low level output voltage

Input resistance

h_FE

V_CE= −10 V, I_C= −5 mA

I_C= −10 mA, I_B= − 0.3 mA

V_CE(sat)

V_OH

− 0.25

V_CC= −5 V, V_B= − 0.5 V, R_L= 1 kΩ −4.9

V_OL

V_CC= −5 V, V_B= −3.5 V, R_L= 1 kΩ

− 0.2

+30%

1.2

R₁

−30%

0.8

1.0

150

kΩ



Resistance ratio

R₁/ R₂

f_T

Gain bandwidth product

V_CB= −10 V, I_E= 2 mA, f = 200 MHz

MHz

Publication date: July 2002

SJH00058AED

12 3

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