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UNR921MJ(UN921MJ) PDF预览

UNR921MJ(UN921MJ)

更新时间: 2024-01-09 13:15:50
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
18页 307K
描述
Composite Device - Transistors with built-in Resistor

UNR921MJ(UN921MJ) 数据手册

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Transistors with built-in Resistor  
UNR92XXJ Series (UN92XXJ Series)  
Silicon NPN epitaxial planer type  
Unit: mm  
+0.0ꢀ  
1.60  
–0.03  
+0.03  
For digital circuit  
0.12  
–0.01  
1.00 0.0ꢀ  
3
I Features  
Costs can be reduced through downsizing of the equipment and  
1
2
reduction of the number of parts.  
SS-mini type package, allowing automatic insertion through tape  
packing.  
0.27 0.02  
(0.ꢀ0)(0.ꢀ0)  
I Resistance by Part Number  
°  
Marking symbol (R1)  
(R2)  
UNR9210J (UN9210J) 8L  
47 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
22 kΩ  
0.51 kΩ  
1 kΩ  
UNR9211J (UN9211J) 8A  
UNR9212J (UN9212J) 8B  
UNR9213J (UN9213J) 8C  
UNR9214J (UN9214J) 8D  
UNR9215J (UN9215J) 8E  
UNR9216J (UN9216J) 8F  
UNR9217J (UN9217J) 8H  
UNR9218J (UN9218J) 8I  
UNR9219J (UN9219J) 8K  
10 kΩ  
22 kΩ  
47 kΩ  
47 kΩ  
5.1 kΩ  
10 kΩ  
100 kΩ  
47 kΩ  
10 kΩ  
22 kΩ  
10 kΩ  
4.7 kΩ  
4.7 kΩ  
47 kΩ  
47 kΩ  
47 kΩ  
2.2 kΩ  
1: Base  
2: Emitter  
3: Collector  
EIAJ: SC-89  
SSMini3-F1 Package  
Internal Connection  
R1  
UNR921AJ  
UNR921BJ  
UNR921CJ  
8X  
8Y  
8Z  
100 kΩ  
100 kΩ  
C
E
B
R2  
UNR921DJ (UN921DJ) 8M  
UNR921EJ (UN921EJ) 8N  
UNR921FJ (UN921FJ) 8O  
UNR921KJ (UN921KJ) 8P  
UNR921LJ (UN921LJ) 8Q  
47 kΩ  
47 kΩ  
4.7 kΩ  
10 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
22 kΩ  
2.2 kΩ  
UNR921MJ  
UNR921NJ  
EL  
EX  
UNR921TJ (UN921TJ) EZ  
UNR921VJ FD  
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
Unit  
V
50  
50  
V
100  
mA  
mW  
°C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
125  
Tj  
125  
Tstg  
55 to +125  
°C  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: July 2001  
SJH00039AED  
1

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