Datasheet > UNR921TJ(UN921TJ)

UNR921TJ(UN921TJ)

更新时间： 2024-11-25 23:39:35

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其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	64K
描述
UNR921TJ (UN921TJ) - NPN Transistor with built-in Resistor

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UNR921TJ(UN921TJ) 数据手册

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Transistors with built-in Resistor

UNR921TJ (UN921TJ)

Silicon NPN epitaxial planer type

Unit: mm

+0.0ꢀ

–0.03

1.60

For digital circuit

For switching

+0.03

0.12

–0.01

1.00 0.0ꢀ

I Features

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

0.27 0.02

(0.ꢀ0)(0.ꢀ0)

• SS-mini type package, allowing automatic insertion through tape

packing.

• Flat lead type, high mounting efficiency

ꢀ°

I Absolute Maximum Ratings T_a= 25°C

Parameter

Collector to base voltage

Collector to emitter voltage

Collector current

Symbol

V_CBO

V_CEO

I_C

Rating

Unit

1: Base

2: Emitter

3: Collector

EIAJ: SC-81

SSMini3-F1 Type Package

100

°C

Marking Symbol: EZ

Total power dissipation

Junction temperature

Storage temperature

P_T

125

T_j

125

Internal Connection

T_stg

−55 to +125

°C

R₁

(22 kΩ)

R₂

(47 kΩ)

I Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

I_CBO

I_CEO

I_EBO

V_CBO

V_CEO

h_FE

Conditions

Min

Typ

Max

0.1

Unit

µA

Collector cutoff current

V_CB= 50 V, I_E= 0

V_CE= 50 V, I_B= 0

0.5

Emitter cutoff current

V_EB= 6 V, I_C= 0

0.2

Collector to base voltage

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

High-level output voltage

Low-level output voltage

Input resistance

I_C= 10 µA, I_E= 0

I_C= 2 mA, I_B= 0

V_CE= 10 V, I_C= 5 mA

I_C= 10 mA, I_B= 0.3 mA

V_CC= 5 V, V_B= 0.5 V, R_L= 1 kΩ

V_CC= 5 V, V_B= 2.5 V, R_L= 1 kΩ

400

V_CE(sat)

V_OH

V_OL

0.25

4.9

0.2

R₁

−30%

+30%

kΩ

Resistance ratio

R₁/R₂

f_T

0.47

150

Transition frequency

V_CB= 10 V, I_E= −2 mA, f = 200 MHz

MHz

Note) The part number in the parenthesis shows conventional part number.

12 3

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