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UNR921MJ|UN921MJ PDF预览

UNR921MJ|UN921MJ

更新时间: 2024-01-20 06:33:24
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管
页数 文件大小 规格书
19页 397K
描述
Composite Device - Transistors with built-in Resistor

UNR921MJ|UN921MJ 数据手册

 浏览型号UNR921MJ|UN921MJ的Datasheet PDF文件第2页浏览型号UNR921MJ|UN921MJ的Datasheet PDF文件第3页浏览型号UNR921MJ|UN921MJ的Datasheet PDF文件第4页浏览型号UNR921MJ|UN921MJ的Datasheet PDF文件第5页浏览型号UNR921MJ|UN921MJ的Datasheet PDF文件第6页浏览型号UNR921MJ|UN921MJ的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR921xJ Series (UN921xJ Series)  
Silicon NPN epitaxial planar type  
Unit: mm  
+0.05  
For digital circuits  
1.60  
–0.03  
+0.03  
0.12  
–0.01  
1.00 0.05  
3
Features  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
1
2
SS-Mini type package, allowing automatic insertion through tape  
packing.  
0.27 0.02  
(0.50)(0.50)  
Resistance by Part Number  
5˚  
Marking Symbol (R1)  
(R2)  
UNR9210J (UN9210J) 8L  
47 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
22 kΩ  
0.51 kΩ  
1 kΩ  
UNR9211J (UN9211J) 8A  
UNR9212J (UN9212J) 8B  
UNR9213J (UN9213J) 8C  
UNR9214J (UN9214J) 8D  
UNR9215J (UN9215J) 8E  
UNR9216J (UN9216J) 8F  
UNR9217J (UN9217J) 8H  
UNR9218J (UN9218J) 8I  
UNR9219J (UN9219J) 8K  
10 kΩ  
22 kΩ  
47 kΩ  
47 kΩ  
5.1 kΩ  
10 kΩ  
100 kΩ  
47 kΩ  
10 kΩ  
22 kΩ  
10 kΩ  
4.7 kΩ  
4.7 kΩ  
47 kΩ  
47 kΩ  
47 kΩ  
2.2 kΩ  
1: Base  
2: Emitter  
3: Collector  
EIAJ: SC-89  
SSMini3-F1 Package  
Internal Connection  
R1  
C
E
B
UNR921AJ  
UNR921BJ  
UNR921CJ  
8X  
8Y  
8Z  
100 kΩ  
100 kΩ  
R2  
UNR921DJ (UN921DJ) 8M  
UNR921EJ (UN921EJ) 8N  
UNR921FJ (UN921FJ) 8O  
UNR921KJ (UN921KJ) 8P  
UNR921LJ (UN921LJ) 8Q  
47 kΩ  
47 kΩ  
4.7 kΩ  
10 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
22 kΩ  
2.2 kΩ  
UNR921MJ  
UNR921NJ  
EL  
EX  
UNR921TJ (UN921TJ) EZ  
UNR921VJ FD  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
50  
50  
V
Collector current  
IC  
PT  
100  
mA  
mW  
°C  
125  
Total power dissipation  
Junction temperature  
Storage temperature  
Tj  
125  
Tstg  
55 to +125  
°C  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: January 2004  
SJH00039BED  
1

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