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UNR921N PDF预览

UNR921N

更新时间: 2024-11-25 22:41:43
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
15页 203K
描述
Silicon NPN epitaxial planer transistor

UNR921N 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.83Is Samacsys:N
其他特性:BUILT IN BIAS RESISTOR RATIO IS 10最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):0.125 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

UNR921N 数据手册

 浏览型号UNR921N的Datasheet PDF文件第2页浏览型号UNR921N的Datasheet PDF文件第3页浏览型号UNR921N的Datasheet PDF文件第4页浏览型号UNR921N的Datasheet PDF文件第5页浏览型号UNR921N的Datasheet PDF文件第6页浏览型号UNR921N的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/  
921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ  
Silicon NPN epitaxial planer transistor  
Unit: mm  
For digital circuits  
1.6±0.15  
0.4  
0.8±0.1  
0.4  
Features  
1
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
3
SS-Mini type package, allowing automatic insertion through tape  
packing and magazine packing.  
2
Resistance by Part Number  
Marking Symbol (R1)  
(R2)  
10k  
22kΩ  
47kΩ  
47kΩ  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
4.7kΩ  
4.7kΩ  
47kΩ  
47kΩ  
100kΩ  
0.2±0.1  
UN9211  
UN9212  
UN9213  
UN9214  
UN9215  
UN9216  
UN9217  
UN9218  
UN9219  
UN9210  
UN921D  
UN921E  
UN921F  
UN921K  
UN921L  
UNR921M  
UNR921N  
UNR921AJ  
UNR921BJ  
UNR921CJ  
8A  
8B  
8C  
8D  
8E  
8F  
10kΩ  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51kΩ  
1kΩ  
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
10kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
100kΩ  
100kΩ  
1 : Base  
2 : Emitter  
3 : Collector  
SS–Mini Type Pakage  
Unit: mm  
8H  
8I  
1.60±0.05  
0.80 0.80±0.05  
0.425 0.425  
8K  
8L  
8M  
8N  
8O  
8P  
8Q  
EL  
EX  
8X  
8Y  
8Z  
0.85+00..0035  
47kΩ  
1 : Base  
2 : Emitter  
3 : Collector  
SS–Mini Flat Type Pakage (J type)  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
50  
50  
Internal Connection  
V
100  
mA  
mW  
˚C  
C
E
R1  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
125  
B
Tj  
125  
R2  
Tstg  
–55 to +125  
˚C  
1

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