Datasheet > UNR621E(UN621E)

UNR621E(UN621E)

更新时间： 2024-11-20 23:39:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
14页	225K
描述
Composite Device - Transistors with built-in Resistor

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中文翻译

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数据手册

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UNR621E(UN621E) 数据手册

Transistors with built-in Resistor

UNR6211/6212/6213/6214/6215/6216/6217/

6218/6219/6210/621D/621E/621F/621K/621L

(UN6211/6212/6213/6214/6215/6216/6217/6218/6219/

6210/621D/621E/621F/621K/621L)

Unit: mm

Silicon NPN epitaxial planer transistor

6.9±0.1

(4.0)

2.5±0.1

(0.8)

(0.7)

For digital circuits

0.65 max.

Features

■

Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

■

MT-1 type package, allowing supply with the radial taping.

+0.10

–0.05

+0.10

0.45

–0.05

1.05±0.05

2.5±0.5

Resistance by Part Number

■

2.5±0.5

(R₁)

10kΩ

22kΩ

47kΩ

10kΩ

4.7kΩ

22kΩ

0.51kΩ

1kΩ

(R₂)

10kΩ

22kΩ

47kΩ

—

1 : Emitter

2 : Collector

3 : Base

■

UNR6211

UNR6212

UNR6213

UNR6214

UNR6215

UNR6216

UNR6217

UNR6218

UNR6219

UNR6210

UNR621D

UNR621E

UNR621F

UNR621K

UNR621L

MT-1-A1 Pakage

—

Internal Connection

5.1kΩ

10kΩ

—

10kΩ

22kΩ

10kΩ

4.7kΩ

47kΩ

4.7kΩ

10kΩ

4.7kΩ

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Collector current

100

˚C

Total power dissipation

Junction temperature

Storage temperature

P_T

400

T_j

150

T_stg

–55 to +150

˚C

Note) The Part numbers in the Parenthesis show conventional part number.

12 3 4 5 6 7...14

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