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UNR521F PDF预览

UNR521F

更新时间: 2024-09-13 11:48:43
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
17页 435K
描述
Silicon NPN epitaxial planar type

UNR521F 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84其他特性:BUILT IN BIAS RESISTOR RATIO 2.13
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):160
JESD-30 代码:R-PDSO-G3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

UNR521F 数据手册

 浏览型号UNR521F的Datasheet PDF文件第2页浏览型号UNR521F的Datasheet PDF文件第3页浏览型号UNR521F的Datasheet PDF文件第4页浏览型号UNR521F的Datasheet PDF文件第5页浏览型号UNR521F的Datasheet PDF文件第6页浏览型号UNR521F的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR521x Series (UN521x Series)  
Silicon NPN epitaxial planar type  
Unit: mm  
+0.10  
–0.05  
+0.1  
For digital circuits  
0.15  
0.3  
–0.0  
3
Features  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts  
1
2
S-Mini type package, allowing automatic insertion through the tape  
packing and magazine packing  
(0.65) (0.65)  
1.3 0.1  
2.0 0.2  
Resistance by Part Number  
10˚  
Marking symbol (R1)  
(R2)  
UNR5210 (UN5210)  
UNR5211 (UN5211)  
UNR5212 (UN5212)  
UNR5213 (UN5213)  
UNR5214 (UN5214)  
UNR5215 (UN5215)  
UNR5216 (UN5216)  
UNR5217 (UN5117)  
UNR5218 (UN5218)  
UNR5219 (UN5219)  
UNR521D (UN521D)  
UNR521E (UN521E)  
UNR521F (UN521F)  
UNR521K (UN521K)  
UNR521L (UN521L)  
8L  
8A  
8B  
8C  
8D  
8E  
8F  
8H  
8I  
8K  
8M  
8N  
8O  
8P  
8Q  
47 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
22 kΩ  
0.51 kΩ  
1 kΩ  
47 kΩ  
47 kΩ  
4.7 kΩ  
10 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
22 kΩ  
2.2 kΩ  
4.7 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
47 kΩ  
1: Base  
2: Emitter  
3: Collector  
EIAJ: SC-70  
SMini3-G1 Package  
Internal Connection  
5.1 kΩ  
10 kΩ  
10 kΩ  
22 kΩ  
10 kΩ  
4.7 kΩ  
4.7 kΩ  
47 kΩ  
47 kΩ  
47 kΩ  
2.2 kΩ  
22 kΩ  
R1  
B
C
E
R2  
UNR521M (UN521M) EL  
UNR521N (UN521N)  
UNR521T (UN521T)  
UNR521V (UN521V)  
UNR521Z (UN521Z)  
EX  
EZ  
FD  
FF  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
50  
50  
V
Collector current  
IC  
PT  
Tj  
100  
mA  
mW  
°C  
Total power dissipation  
Junction temperature  
Storage temperature  
150  
150  
Tstg  
55 to +150  
°C  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: January 2004  
SJH00024CED  
1

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