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UNR51A7G

更新时间: 2024-09-15 21:17:39
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
4页 534K
描述
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN

UNR51A7G 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84其他特性:BUILT IN BIAS RESISTOR
最大集电极电流 (IC):0.08 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):160
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

UNR51A7G 数据手册

 浏览型号UNR51A7G的Datasheet PDF文件第2页浏览型号UNR51A7G的Datasheet PDF文件第3页浏览型号UNR51A7G的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Transistors with built-in Resistor  
UNR51A7G  
Silicon PNP epitaxial planar type  
For digital circuits  
Features  
Package  
Costs can be reduced through downsizing of the equipment and reduction of  
the number of parts.  
Code  
SMini3-F2  
Pin Name  
1: Base  
SMini type package allowing easy automatic insertion through tape packing  
2: mitter  
ctor  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
I
Ratin
0  
Unit  
V
Marking Symbol: CP  
Internal Connection  
V
mA  
mW  
°C  
R1 (22 k)  
Total power dissipation  
PT  
150  
C
E
B
Junction temperature  
Tj  
150  
Storage temperature  
T
g  
–55 to +150  
°C  
Electrical Charristics Ta = 2°C±3°
Parameter  
Symbol  
Conditions  
Min  
-50  
-50  
Typ  
Max  
Unit  
V
Collecor-base voltagEmitteopen)  
Collector-emitte open)  
Collector-base cutofmitter open)  
Collector-emitter cutoff crent (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Output voltage high-level  
VCBO IC = -10 mA, IE = 0  
VCEO IC = -2 mA, IB = 0  
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = -50 V, IE = 0  
VCE = -50 V, IB = 0  
VEB = -6 V, IC = 0  
- 0.1  
- 0.5  
- 0.01  
460  
mA  
mA  
mA  
VCE = -10 V, IC = -5 mA  
160  
-4.9  
V
VCE(sat) IC = -10 mA, IB = - 0.3 mA  
- 0.25  
VOH  
VOL  
R1  
VCC = -5 V, VB = - 0.5 V, RL = 1 kW  
VCC = -5 V, VB = - 2.5 V, RL = 1 kW  
V
Output voltage low-level  
V
- 0.2  
Input resistance  
30%  
22  
80  
+30%  
kW  
MHz  
Transition frequency  
fT  
VCB = -10 V, IE = 1 mA, f = 200 MHz  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: August 2008  
SJH00269AED  
1

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