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UNR5211 PDF预览

UNR5211

更新时间: 2024-02-03 17:58:22
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
17页 435K
描述
Silicon NPN epitaxial planar type

UNR5211 技术参数

生命周期:Obsolete零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknown风险等级:5.84
JESD-30 代码:R-PDSO-G3端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUALBase Number Matches:1

UNR5211 数据手册

 浏览型号UNR5211的Datasheet PDF文件第2页浏览型号UNR5211的Datasheet PDF文件第3页浏览型号UNR5211的Datasheet PDF文件第4页浏览型号UNR5211的Datasheet PDF文件第5页浏览型号UNR5211的Datasheet PDF文件第6页浏览型号UNR5211的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR521x Series (UN521x Series)  
Silicon NPN epitaxial planar type  
Unit: mm  
+0.10  
–0.05  
+0.1  
For digital circuits  
0.15  
0.3  
–0.0  
3
Features  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts  
1
2
S-Mini type package, allowing automatic insertion through the tape  
packing and magazine packing  
(0.65) (0.65)  
1.3 0.1  
2.0 0.2  
Resistance by Part Number  
10˚  
Marking symbol (R1)  
(R2)  
UNR5210 (UN5210)  
UNR5211 (UN5211)  
UNR5212 (UN5212)  
UNR5213 (UN5213)  
UNR5214 (UN5214)  
UNR5215 (UN5215)  
UNR5216 (UN5216)  
UNR5217 (UN5117)  
UNR5218 (UN5218)  
UNR5219 (UN5219)  
UNR521D (UN521D)  
UNR521E (UN521E)  
UNR521F (UN521F)  
UNR521K (UN521K)  
UNR521L (UN521L)  
8L  
8A  
8B  
8C  
8D  
8E  
8F  
8H  
8I  
8K  
8M  
8N  
8O  
8P  
8Q  
47 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
22 kΩ  
0.51 kΩ  
1 kΩ  
47 kΩ  
47 kΩ  
4.7 kΩ  
10 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
22 kΩ  
2.2 kΩ  
4.7 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
47 kΩ  
1: Base  
2: Emitter  
3: Collector  
EIAJ: SC-70  
SMini3-G1 Package  
Internal Connection  
5.1 kΩ  
10 kΩ  
10 kΩ  
22 kΩ  
10 kΩ  
4.7 kΩ  
4.7 kΩ  
47 kΩ  
47 kΩ  
47 kΩ  
2.2 kΩ  
22 kΩ  
R1  
B
C
E
R2  
UNR521M (UN521M) EL  
UNR521N (UN521N)  
UNR521T (UN521T)  
UNR521V (UN521V)  
UNR521Z (UN521Z)  
EX  
EZ  
FD  
FF  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
50  
50  
V
Collector current  
IC  
PT  
Tj  
100  
mA  
mW  
°C  
Total power dissipation  
Junction temperature  
Storage temperature  
150  
150  
Tstg  
55 to +150  
°C  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: January 2004  
SJH00024CED  
1

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