Datasheet > UNR121L|UN121L

UNR121L|UN121L

更新时间： 2024-11-22 23:39:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
14页	340K
描述
Composite Device - Transistors with built-in Resistor

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UNR121L|UN121L 数据手册

Transistors with built-in Resistor

UNR121x Series (UN121x Series)

Silicon NPN epitaxial planar type

Unit: mm

For digital circuits

2.5 0.1

6.9 0.1

(1.5)

(1.0)

■ Features

R 0.9

•

Costs can be reduced through downsizing of the equipment and

reduction of the number of parts

R 0.7

•

M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board

(0.85)

0.45 0.05

■ Resistance by Part Number

0.55 0.1

(R₁)

(R₂)



•

UNR1210 (UN1210)

UNR1211 (UN1211)

UNR1212 (UN1212)

UNR1213 (UN1213)

UNR1214 (UN1214)

UNR1215 (UN1215)

UNR1216 (UN1216)

UNR1217 (UN1217)

UNR1218 (UN1218)

UNR1219 (UN1219)

UNR121D (UN121D)

UNR121E (UN121E)

UNR121F (UN121F)

UNR121K (UN121K)

UNR121L (UN121L)

47 kΩ

10 kΩ

22 kΩ

47 kΩ

10 kΩ

4.7 kΩ

22 kΩ

0.51 kΩ

1 kΩ

47 kΩ

4.7 kΩ

10 kΩ

4.7 kΩ

10 kΩ

22 kΩ

47 kΩ



1: Base

2: Collector

3: Emitter

(2.5) (2.5)

M-A1 Package

Internal Connection



R₁

5.1 kΩ

10 kΩ

22 kΩ

10 kΩ

4.7 kΩ

R₂

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Collector current

I_C

P_T

100

°C

400

Total power dissipation

Junction temperature

Storage temperature

T_j

150

T_stg

−55 to +150

°C

Note) The part numbers in the parenthesis show conventional part number.

Publication date: October 2003

SJH00003BED

12 3 4 5 6 7...14

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