Datasheet > UNR1221

UNR1221

更新时间： 2024-11-18 23:39:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
5页	85K
描述
TRANSISTOR \| 50V V(BR)CEO \| 500MA I(C) \| SC-71

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中文翻译

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UNR1221 数据手册

Transistors with built-in Resistor

UNR1221/1222/1223/1224 (UN1221/1222/1223/1224)

Unit: mm

Silicon NPN epitaxial planer transistor

6.9±0.1

2.5±0.1

1.5

For digital circuits

1.5 R0.9

1.0

R0.9

Features

■

Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

R0.7

■

M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

0.85

Resistance by Part Number

■

0.55±0.1

0.45±0.05

(R₁)

(R₂)

■

UNR1221

UNR1222

UNR1223

UNR1224

2.2kΩ

4.7kΩ

10kΩ

2.2kΩ

4.7kΩ

10kΩ

2.5

1:Base

Absolute Maximum Ratings (Ta=25˚C)

■

2:Collector

3:Emitter

M Type Mold Package

Parameter

Symbol

V_CBO

V_CEO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Collector current

Internal Connection

500

˚C

Total power dissipation

Junction temperature

Storage temperature

P_T

600

T_j

150

T_stg

–55 to +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

Conditions

min

typ

max

Unit

I_CBO

V_CB= 50V, I_E= 0

µA

Collector cutoff current

I_CEO

V_CE= 50V, I_B= 0

V_EB= 6V, I_C= 0

µA

UNR1221

Emitter

UNR1222

I_EBO

cutoff

current

UNR1223/1224

Collector to base voltage

Collector to emitter voltage

Forward UNR1221

V_CBO

V_CEO

I_C= 10µA, I_E= 0

I_C= 2mA, I_B= 0

current

transfer

UNR1222

h_FE

V_CE= 10V, I_C= 100mA

UNR1223/1224

ratio

Collector to emitter saturation voltage V_CE(sat)

I_C= 100mA, I_B= 5mA

0.25

0.2

Output voltage high level

Output voltage low level

Transition frequency

V_OH

V_OL

f_T

V_CC= 5V, V_B= 0.5V, R_L= 500Ω

V_CC= 5V, V_B= 3.5V, R_L= 500Ω

V_CB= 10V, I_E= –50mA, f = 200MHz

4.9

200

2.2

4.7

MHz

UNR1221/1224

Input

UNR1222

R₁

(–30%)

0.8

(+30%)

1.2

kΩ

resis-

tance

UNR1223

Resistance ratio

1.0

0.22

R₁/R₂

UNR1224

Note) The part numbers in the parenthesis show conventional part number.

12 3 4 5

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与UNR1221相关器件

型号	品牌	获取价格	描述	数据表
UNR1221(UN1221)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR1222	PANASONIC	获取价格	Composite Transistors Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial
UNR1222(UN1222)	ETC	获取价格	複合デバイス－抵抗内蔵型トランジスタ
UNR1223	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 500MA I(C) \| SC-71
UNR1223(UN1223)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR1224	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 500MA I(C) \| SC-71
UNR1224(UN1224)	ETC	获取价格	複合デバイス－抵抗内蔵型トランジスタ
UNR1231	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC
UNR1231(UN1231)	ETC	获取价格	複合デバイス－抵抗内蔵型トランジスタ
UNR1231/1231A(UN1231/1231A)	ETC	获取价格	UNR1231/1231A (UN1231/1231A) - NPN Transistor with built-in Resistor

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