5秒后页面跳转
UNR1222 PDF预览

UNR1222

更新时间: 2024-11-23 03:57:11
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管
页数 文件大小 规格书
5页 105K
描述
Composite Transistors Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2)

UNR1222 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):50JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:NPN
最大功率耗散 (Abs):0.6 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

UNR1222 数据手册

 浏览型号UNR1222的Datasheet PDF文件第2页浏览型号UNR1222的Datasheet PDF文件第3页浏览型号UNR1222的Datasheet PDF文件第4页浏览型号UNR1222的Datasheet PDF文件第5页 
Composite Transistors  
XN04322 (XN4322)  
Silicon NPN epitaxial planer transistor (Tr1)  
Silicon PNP epitaxial planer transistor (Tr2)  
Unit: mm  
+0.20  
–0.05  
1.9 0.1  
(0.95) (0.95)  
2.90  
+0.10  
0.16  
–0.06  
For switching/digital circuits  
4
3
5
6
Features  
I
G
Two elements incorporated into one package.  
(Transistors with built-in resistor)  
Reduction of the mounting area and assembly cost by one half.  
2
1
+0.10  
–0.05  
0.30  
0.50  
G
+0.10  
–0.05  
10˚  
Basic Part Number of Element  
UNR1222(UN1222) + UNR1122(UN1122)  
I
G
1 : Collector (Tr1)  
2 : Base (Tr2)  
3 : Emitter (Tr2)  
4 : Collector (Tr2)  
5 : Base (Tr1)  
6 : Emitter (Tr1)  
EIAJ : SC–74  
Absolute Maximum Ratings (Ta=25˚C)  
I
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
50  
Unit  
V
Mini6-G1 Package  
Collector to base voltage  
Collector to emitter voltage  
Collector current  
Collector to base voltage  
Collector to emitter voltage  
Collector current  
Total power dissipation  
Tr1  
Tr2  
50  
V
Marking Symbol: 7V  
Internal Connection  
500  
mA  
V
VCBO  
VCEO  
IC  
–50  
–50  
V
Tr1  
6
1
2
3
–500  
300  
mA  
mW  
˚C  
PT  
5
Overall Junction temperature  
Storage temperature  
Tj  
150  
4
Tr2  
Tstg  
–55 to +150  
˚C  
Note) The Part number in the Parenthesis shows conventional part number.  
1

与UNR1222相关器件

型号 品牌 获取价格 描述 数据表
UNR1222(UN1222) ETC

获取价格

複合デバイス - 抵抗内蔵型トランジスタ
UNR1223 ETC

获取价格

TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SC-71
UNR1223(UN1223) ETC

获取价格

Composite Device - Transistors with built-in Resistor
UNR1224 ETC

获取价格

TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SC-71
UNR1224(UN1224) ETC

获取价格

複合デバイス - 抵抗内蔵型トランジスタ
UNR1231 PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC
UNR1231(UN1231) ETC

获取价格

複合デバイス - 抵抗内蔵型トランジスタ
UNR1231/1231A(UN1231/1231A) ETC

获取价格

UNR1231/1231A (UN1231/1231A) - NPN Transistor with built-in Resistor
UNR1231|UN1231 ETC

获取价格

Composite Device - Transistors with built-in Resistor
UNR1231A(UN1231A) ETC

获取价格

複合デバイス - 抵抗内蔵型トランジスタ