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UNR1231|UN1231 PDF预览

UNR1231|UN1231

更新时间： 2024-11-22 23:39:27
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 81K
描述
Composite Device - Transistors with built-in Resistor

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中文翻译

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UNR1231|UN1231 数据手册

 浏览型号UNR1231|UN1231的Datasheet PDF文件第2页浏览型号UNR1231|UN1231的Datasheet PDF文件第3页 
Transistors with built-in Resistor  
UNR1231 (UN1231), UNR1231A (UN1231A)  
Silicon NPN epitaxial planar type  
Unit: mm  
For amplification of the low frequency  
2.5 0.1  
6.9 0.1  
(1.5)  
(1.0)  
(1.5)  
■ Features  
• High forward current transfer ratio hFE  
R 0.9  
R 0.7  
•
M type mold package  
• Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
(0.85)  
0.55 0.1  
0.45 0.05  
■ Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
Collector-base voltage UNR1231  
VCBO  
20  
V
(Emitter open)  
UNR1231A  
60  
3
2
1
1: Base  
2: Collector  
3: Emitter  
(2.5) (2.5)  
Collector-emitter voltage UNR1231  
VCEO  
20  
V
(Base open)  
UNR1231A  
50  
0.7  
M-A1 Package  
Collector current  
Peak collector current  
IC  
ICP  
PT  
A
A
Internal Connection  
1.5  
Total power dissipation *  
Junction temperature  
Storage temperature  
1.0  
W
°C  
°C  
R1(1 kΩ)  
C
E
Tj  
150  
B
Tstg  
−55 to +150  
R2  
(47 KΩ)  
Note) : Printed circuit board: Copper foil area of 1 cm2 or more, and the  
*
board thickness of 1.7 mm for the collector portion  
■ Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
Conditions  
IC = 10 µA, IE = 0  
Min  
20  
Typ  
Max  
Unit  
Collector-base voltage UNR1231  
VCBO  
V
(Emitter open)  
Collector-emitter voltage UNR1231  
(Base open) UNR1231A  
UNR1231A  
60  
VCEO  
IC = 1 mA, IB = 0  
20  
V
50  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio *  
Collector-emitter saturation voltage *  
Transition frequency  
ICBO  
ICEO  
IEBO  
hFE  
VCB = 15 V, IE = 0  
VCE = 15 V, IB = 0  
VEB = 14 V, IC = 0  
VCE = 10 V, IC = 150 mA  
1
10  
µA  
µA  
mA  
0.5  
800  
0.7  
2100  
0.4  
VCE(sat) IC = 500 mA, IB = 5 mA  
V
fT  
R1  
VCB = 20 V, IE = −20 mA, f = 200 MHz  
55  
1
MHz  
V
Input resistance  
1.3  
Resistance ratio  
R1/R2  
0.016 0.021 0.025  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Pulse measurement  
*
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: October 2003  
SJH00005BED  
1
123

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