Datasheet > UMX4906DR

UMX4906DR

更新时间： 2024-12-01 18:43:11

品牌	Logo	应用领域
美高森美 - MICROSEMI		衰减器开关测试二极管
页数	文件大小	规格书
6页	498K
描述
Pin Diode, 600V V(BR), Silicon, ROHS COMPLIANT PACKAGE-2

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

UMX4906DR 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	O-CRPM-F2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.7
其他特性：	LOW DISTORTION	应用：	ATTENUATOR; SWITCHING
最小击穿电压：	600 V	配置：	SINGLE
最大二极管电容：	3 pF	标称二极管电容：	2.4 pF
二极管元件材料：	SILICON	最大二极管正向电阻：	0.5 Ω
二极管电阻测试电流：	100 mA	二极管电阻测试频率：	100 MHz
二极管类型：	PIN DIODE	频带：	HIGH FREQUENCY TO S BAND
JESD-30 代码：	O-CRPM-F2	少数载流子标称寿命：	10 µs
元件数量：	1	端子数量：	2
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	ROUND
封装形式：	POST/STUD MOUNT	最大功率耗散：	25 W
认证状态：	Not Qualified	反向测试电压：	100 V
子类别：	PIN Diodes	表面贴装：	NO
技术：	POSITIVE-INTRINSIC-NEGATIVE	端子形式：	FLAT
端子位置：	RADIAL	Base Number Matches：	1

UMX4906DR 数据手册

www.MICROSEMI.com

UM4000 / UM4900

HIGH POWER PIN DIODES

RoHS Compliant Versions Available

DESCRIPTION

KEY FEATURES

The UM4000 and UM4900 series features high power PIN diodes with long carrier

lifetimes and thick I-regions. They are especially suitable for use in low distortion

switches and attenuators, in HF through S band frequencies. While both series are

electrically equivalent, the UM4900 series have higher power ratings due to a shorter

thermal path between the chip and package. High charge storage and long carrier

lifetime enable high RF levels to be controlled with relatively low bias current.

Similarly, peak RF voltages can be handled well in excess of applied reverse bias

voltage.

Both series have been fully qualified in high power UHF phase shifters and megawatt

peak-power duplexers, accumulating thousands of hours of proven performance.

Both types have been used in the design of antenna selectors and couplers, where

inductance and capacitance elements are switched in and out of filter or cavity

networks.

. Voltage ratings to 1000 V

. Power dissipation to 37.5 W

. Series resistance rated at 0.5 Ω

. Carrier lifetime greater than 5 µs

. Non cavity design

. RoHS compliant version

available ¹

The standard finish for the UM4000 series is Sn/Pb. For RoHS compliant devices,

use the UMX prefix. (IE: UMX4000SM) The UMX series meets RoHS requirements

per EU Directive 2002/95/EC.

. Thermally matched configuration

. Low capacitance at 0 V bias

. Low conductance at 0 V bias

IMPORTANT:

. Compatible with automatic

For the most current data, consult our website: www.MICROSEMI.com

insertion equipment

ABSOLUTE MAXIMUM RATINGS AT 25º C

(UNLESS OTHERWISE SPECIFIED)

1- RoHS compliant version is

supplied with a matte tin finish.

(Order UMX4000, UMX4900)

Package

Condition

UM4000

UM4900

PD (W) θ (^OC/W) PD (W) θ (^OC/W)

25 ^OC Pin Temperature

37.5

APPLICATIONS/BENEFITS

. Isolated stud package available

½ in. total length to 25 ^OC Contact

2.5

1.25

2.5

37.5

12.5

B & E

Free Air

. Surface mount package available

25 ^OC Stud Temperature

25 ^OC End Cap Temperature

18.75

All

N/A

1 us pulse (Single)

100 kW

VOLTAGE RATINGS

Reverse Voltage @ 10 uA

UM4000

UM4001

UM4002

UM4006

UM4010

UM4900

UM4901

UM4902

100

200

400

600

UM4906

1000

Rev: 2009-01-19

Microsemi

Page 1

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

12 3 4 5 6

中文翻译

下载PDF

与UMX4906DR相关器件

型号	品牌	获取价格	描述	数据表
UMX4906E	MICROSEMI	获取价格	Pin Diode, 600V V(BR), Silicon, ROHS COMPLIANT PACKAGE-2
UMX4906SM	MICROSEMI	获取价格	Pin Diode, 600V V(BR), Silicon, ROHS COMPLIANT PACKAGE-2
UMX4N	ROHM	获取价格	High transition frequency (dual transistors)
UMX4NTL	ROHM	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 2-Element, Silicon, NPN
UMX4NTN	ROHM	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 18V V(BR)CEO, 2-Element, NPN, Silicon,
UMX4NTR	ROHM	获取价格	Two 2SC3837K chips in a EMT or UMT or SMT package.
UMX4TL	ROHM	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 18V V(BR)CEO, 2-Element, NPN, Silicon, MINIMO
UMX4TN	ROHM	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 18V V(BR)CEO, 2-Element, NPN, Silicon, MINIMO
UMX4TR	ROHM	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 18V V(BR)CEO, 2-Element, NPN, Silicon, MINIMO
UMX5	ETC	获取价格	TRANSISTOR \| BJT \| PAIR \| NPN \| 11V V(BR)CEO \| 50MA I(C) \| SO

与UMX4906DR相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

UMX4906DR

UMX4906DR 技术参数

UMX4906DR 数据手册

与UMX4906DR相关器件

与UMX4906DR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UMX4906DR

UMX4906DR 技术参数

UMX4906DR 数据手册

与UMX4906DR相关器件

与UMX4906DR相关文章

您还可以找

您在本页遇到什么问题？