Datasheet > UMX5601_10

UMX5601_10

更新时间： 2024-12-01 08:24:03

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
4页	214K
描述
ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS

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UMX5601_10 数据手册

UMX5601

ULTRA LOW MAGNETIC MOMENT PIN

DIODE FOR MRI APPLICATIONS

RoHS COMPLIANT

KEY FEATURES

DESCRIPTION

The UMX5601^TMPIN diode series was designed to provide ultra low magnetic PIN

diodes for in bore surface coil applications associated with higher field strength (3T

and greater) MR scanners. These PIN diodes produce the minimum artifacts

(magnetic field distortions) available in the industry, today. The diodes have been

tested in magnetic fields of ±7 Tesla.

. Ultra low magnetic construction

. SOGO passivated chip

. Thermally matched configuration

. RoHS compliant ¹

The UMX5601 PIN diodes have a magnetic moment at 7 T of 4E-8 (J/T).

The diodes are offered in a surface mount package. The SM package utilizes a

round end cap to mark the anode. The cathode is square. The fully passivated PIN

diode chip is full face metallurgically bonded to shortened high conductive pins for

lower thermal and electrical resistances. The PIN diodes feature low forward bias

resistance and high zero bias impedance. The UMX5601 PIN diodes are

characterized at 64, 128, and 300 MHz. The UMX5601SM meets RoHS requirements

per EU Directive 2002/95/EC.

. Low capacitance at 0 V bias

. Low conductance at 0 V bias

. Metallurgical bond

. Fused-in-glass construction

. Non cavity design

IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com

ABSOLUTE MAXIMUM RATINGS AT 25º C

(UNLESS OTHERWISE SPECIFIED)

. Available in surface mount

package.

Rating

Symbol

Value

Unit

. Compatible with automatic

insertion equipment

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

100

1- These devices are supplied with

Silver terminations. Other terminal

finishes may be available on request.

Consult factory for details.

RMS Reverse Voltage

Storage Temperature

V _{R (RMS)}

T stg

-65 to +175

-65 to +150

ºC

Operating Temperature Non-Repetitive Peak

T op

THERMAL CHARACTERISTICS

(UNLESS OTHERWISE SPECIFIED)

APPLICATIONS/BENEFITS

Thermal Resistance

UMX5601SM

Symbol

Value

Unit

ºC/Watt

. High B Field (3T+) in bore

APPLICATIONS:

. Active or semi-active

(not passive)

. MR blocking circuits

. MR detuning circuits

. MR disable circuits

. MR receiver protector circuits

Rev: 2010-02-03

Microsemi

Page 1

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

12 3 4

中文翻译

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与UMX5601_10相关器件

型号	品牌	获取价格	描述	数据表
UMX5601SM	MICROSEMI	获取价格	ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS
UMX-570	AGILENT	获取价格	Double Balanced Mixer, 1MHz Min, 500MHz Max, 7dB Conversion Loss-Max
UMX-586-D16-G	RFMD	获取价格	ULTRA-LOW NOISE COAXIAL RESONATOR OSCILLATOR
UMX-599-D16-G	RFMD	获取价格	ULTRA-LOW NOISE COAXIAL RESONATOR OSCILLATOR
UMX5N	ROHM	获取价格	High transition frequency (dual transistors)
UMX5NTL	ROHM	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 11V V(BR)CEO, 2-Element, NPN, Silicon,
UMX5NTN	ROHM	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 11V V(BR)CEO, 2-Element, NPN, Silicon,
UMX5NTR	ROHM	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 2-Element, Silicon, NPN, UMT6, SC-88, 6 PI
UMX5TL	ROHM	获取价格	暂无描述
UMX5TR	ROHM	获取价格	暂无描述

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