UMX5TR

更新时间： 2024-10-14 13:15:11

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
2页	69K
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中文翻译

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数据手册

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UMX5TR 数据手册

EMX5 / UMX5N / IMX5

Transistors

High transition frequency (dual transistors)

EMX5 / UMX5N / IMX5

!External dimensions (Units : mm)

!Features

1) Two 2SC3838K chips in a EMT or UMT or SMT package.

2) High transition frequency. (f^T=3.2GHz)

3) Low output capacitance. (Cob=0.9pF)

EMX6

( )

1.2

1.6

!Equivalent circuits

EMX5 / UMX5N

IMX5

(3) (2)

(1)

(4) (5)

(6)

ROHM : EMT6

UMX5N

Each lead has same dimensions

(4)

(5)

(6)

(3)

(2)

(1)

1.25

2.1

!Absolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Limits

Unit

VCBO

VCEO

VEBO

0.1Min.

ROHM : UMT6

EIAJ : SC-88

Each lead has same dimensions

EMX5 / UMX5N

IMX5

150(TOTAL)

300(TOTAL)

150

∗1

∗2

Collector power

dissipation

IMX5

Junction temperature

Storage temperature

°C

Tstg

−55~+150

∗1 120mW per element must not be exceeded.

∗2 200mW per element must not be exceeded.

1.6

2.8

!Package, marking, and packaging specifications

Type

EMX5

EMT5

UMX5N

UMT6

IMX5

SMT6

Package

0.3Min.

Marking

Code

T2R

T108

3000

ROHM : SMT6

EIAJ : SC-74

Each lead has same dimensions

Basic ordering unit (pieces)

8000

3000

!Electrical characteristics (Ta=25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol

Min.

Typ.

Max.

Conditions

Unit

BV^CBO

BVCEO

BVEBO

−

=10µA

C=1mA

−

=10µA

CB=10V

EB=2V

CBO

EBO

CE(sat)

FE1 / FE2

−

0.5

270

0.5

µA

−

Emitter cutoff current

DC current transfer ratio

−

0.5

1.4

−

CE/I

=10V/5mA

=10mA/5mA

=10V/5mA

C/I

Collector-emitter saturation voltage

−

CE/I

hFE pairing

Transition frequency

3.2

0.9

−

1.55

∗

GHz

=10V/10mA, f=200MHz

Output capacitance

Cob

CB/f=10V/1MHz, I =0A

∗Transition frequency of the device.

中文翻译

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