Datasheet > UMX5101_09

UMX5101_09

更新时间： 2024-12-01 12:20:19

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
4页	231K
描述
ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UMX5101_09 数据手册

UMX5101

ULTRA LOW MAGNETIC MOMENT PIN

DIODE FOR MRI APPLICATIONS

RoHS COMPLIANT

KEY FEATURES

DESCRIPTION

The UMX5101 PIN diode series was designed to provide ultra low magnetic PIN diodes for in

bore surface coil applications associated with higher field strength (3T and greater) MR

scanners. These PIN diodes produce the minimum artifacts (magnetic field distortions) available

in the industry, today. The diodes have been tested in magnetic fields of ±7 Tesla.

. Ultra low magnetic construction

. SOGO passivated chip

. Thermally matched configuration

. RoHS compliant ¹

The UMX5101 PIN diodes have a magnetic moment at 7 T of 2E-8

(J/T).

The diodes are offered in a surface mount package. The SM package utilizes a square end cap

to mark the cathode. The anode is round. The fully SOGO passivated PIN diode chip is full

face metallurgically bonded to high conductive pins for lower thermal and electrical

resistances. The PIN diodes feature low forward bias resistance and high zero bias impedance.

The UMX5101 PIN diodes are characterized at 64, 128, and 300 MHz. The UMX5101 meets

RoHS requirements per EU Directive 2002/95/EC.

. Low capacitance at 0 V bias

. Low conductance at 0 V bias

. Metallurgical bond

. Fused-in-glass construction

. Non cavity design

ABSOLUTE MAXIMUM RATINGS AT 25º C

(UNLESS OTHERWISE SPECIFIED)

. Available in surface mount

package.

Rating

Symbol

Value

Unit

. Compatible with automatic

insertion equipment

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

100

1- These devices are supplied with

Silver terminations. Other terminal

finishes may be available on request.

Consult factory for details.

RMS Reverse Voltage

Storage Temperature

V _{R (RMS)}

T stg

-65 to +175

-65 to +150

ºC

Operating Temperature Non-Repetitive Peak

T op

THERMAL CHARACTERISTICS AT 25º C

(UNLESS OTHERWISE SPECIFIED)

Thermal Resistance

APPLICATIONS/BENEFITS

. High B Field (3T+) in bore

APPLICATIONS:

UMX5101SM

ºC/Watt

. Active or semi-active

(not passive)

IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com

. MR blocking circuits

. MR detuning circuits

. MR disable circuits

. MR receiver protector circuits

Rev: 2009-01-19

Microsemi

Page 1

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

12 3 4

中文翻译

下载PDF

与UMX5101_09相关器件

型号	品牌	获取价格	描述	数据表
UMX5101SM	MICROSEMI	获取价格	ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS
UMX512-F	MICROSEMI	获取价格	Pin Diode,
UMX5601	MICROSEMI	获取价格	ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS
UMX5601_10	MICROSEMI	获取价格	ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS
UMX5601SM	MICROSEMI	获取价格	ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS
UMX-570	AGILENT	获取价格	Double Balanced Mixer, 1MHz Min, 500MHz Max, 7dB Conversion Loss-Max
UMX-586-D16-G	RFMD	获取价格	ULTRA-LOW NOISE COAXIAL RESONATOR OSCILLATOR
UMX-599-D16-G	RFMD	获取价格	ULTRA-LOW NOISE COAXIAL RESONATOR OSCILLATOR
UMX5N	ROHM	获取价格	High transition frequency (dual transistors)
UMX5NTL	ROHM	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 11V V(BR)CEO, 2-Element, NPN, Silicon,

与UMX5101_09相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

UMX5101_09

UMX5101_09 数据手册

与UMX5101_09相关器件

与UMX5101_09相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UMX5101_09

UMX5101_09 数据手册

与UMX5101_09相关器件

与UMX5101_09相关文章

您还可以找

您在本页遇到什么问题？