Datasheet > UMX2106E

UMX2106E

更新时间： 2024-09-16 05:19:11

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
6页	292K
描述
Pin Diode, 600V V(BR), Silicon, ROHS COMPLIANT PACKAGE-2

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UMX2106E 数据手册

UM2100

ATTENUATOR AND POWER PIN DIODES

2 – 30 MHz

RoHS Compliant Versions Available

KEY FEATURES

. HF band (2-30 MHz) PIN

DESCRIPTION

UM2100 Series PIN diodes are designed for transmit/receive switch

and attenuator applications in HF band (2-30MHz) and below. As

series configured switches, these long lifetime (25μs typical) diodes

can control up to 2.5 kW, CW in a 50 ohm system. In HF band,

insertion loss is less than 0.25dB and isolation is greater than 32dB

(off-state).

The UM2100 series offers the lowest distortion performance in both

transmit and receive modes. Less than 50 mA forward bias is requires

to obtain an IP3 of 60 dBm at 300 kHz with 1 watt per tone. The

forward biased resistance/reactance vs. frequency characteristics are

flat down to 10 kHz. The capacitance vs. reverse bias voltage

characteristic is flat down to 2 MHz. In attenuator configuration, the

UM2100 produces extremely low distortion at low values of attenuator

control current, and very low insertion loss (0.2dB) in the “0dB”

attenuator state.

. Long Lifetime (25μs typical)

. High Power ( 1kW, CW)

. High Isolation (32dB)

. Low Loss (0.25dB)

. Very Low Distortion

(IP3=60dBm)

. Voltage ratings to 1000 V

. RoHS compliant packaging

Available¹

(use UMX2101B, etc.)

IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com

ABSOLUTE MAXIMUM RATINGS AT 25º C

(UNLESS OTHERWISE SPECIFIED)

The UM2100 series of products can be

(P_D) Power

Dissapation

(W)

( Θ )Thermal

Resistance

( ^OC/W)

supplied with a RoHS compliant finish

(UMX2100) or with a 90/10 Sn/Pb finish.

Consult factory for details.

Package

Conditions

25 ^OC Pin Temperature

50V

12.5

½ in. total length to 25 ^O

Contact Free Air

2.5

25 ^OC Stud Temperature

25 ^OC End Cap Temperature

1 us pulse (Single)

18.75

APPLICATIONS/BENEFITS

. Isolated stud package available

. Surface mount package available

. Soldering temperature:

260 ^oC for 10 seconds

ALL

100KW

maximum

-65 ^OC to + 175 ^OC

Storage Temperature (T_OP

)

Operating Temperature (T_OP

)

Microsemi

Page 1

Rev: 2009-01-19

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

12 3 4 5 6

中文翻译

下载PDF

与UMX2106E相关器件

型号	品牌	获取价格	描述	数据表
UMX2106SM	MICROSEMI	获取价格	Pin Diode, 600V V(BR), Silicon, ROHS COMPLIANT PACKAGE-2
UMX2108B	MICROSEMI	获取价格	Pin Diode, 800V V(BR), Silicon, ROHS COMPLIANT PACKAGE-2
UMX2108C	MICROSEMI	获取价格	Pin Diode, 800V V(BR), Silicon, ROHS COMPLIANT PACKAGE-1
UMX2108CR	MICROSEMI	获取价格	Pin Diode, 800V V(BR), Silicon, ROHS COMPLIANT PACKAGE-1
UMX2108D	MICROSEMI	获取价格	Pin Diode, 800V V(BR), Silicon, ROHS COMPLIANT PACKAGE-2
UMX2108DR	MICROSEMI	获取价格	Pin Diode, 800V V(BR), Silicon, ROHS COMPLIANT PACKAGE-2
UMX2108E	MICROSEMI	获取价格	Pin Diode, 800V V(BR), Silicon
UMX2108SM	MICROSEMI	获取价格	Pin Diode, 800V V(BR), Silicon, ROHS COMPLIANT PACKAGE-2
UMX2110	UTC	获取价格	low on-resistance wide bandwidth dual 1:1 analog switch of level shifter
UMX2110B	MICROSEMI	获取价格	Pin Diode, 1000V V(BR), Silicon, ROHS COMPLIANT PACKAGE-2

与UMX2106E相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

4
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

4
SL74HC10N：高性能三输入与非门解析
2024-09-03

83
AIC1781A 电池充电控制器深度解析
2024-09-03

75

产品中心

服务支持

精选活动

关于我们

帮助中心

UMX2106E

UMX2106E 数据手册

与UMX2106E相关器件

与UMX2106E相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UMX2106E

UMX2106E 数据手册

与UMX2106E相关器件

与UMX2106E相关文章

您还可以找

您在本页遇到什么问题？