UMX21N

更新时间： 2024-11-28 22:17:27

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
3页	70K
描述
High transition frequency (dual transistors)

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中文翻译

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UMX21N 数据手册

UMX21N

Transistors

High transition frequency (dual transistors)

UMX21N

zExternal dimensions (Unit : mm)

zFeatures

1) Two 2SC4713K chips in a UMT package.

2) Very low output-on resistance. (Ron)

3) Low capacitance.

UMX21N

1.25

2.1

zEquivalent circuits

UMX21N

0.1Min.

(3) (2)

(1)

ROHM : UMT6

EIAJ : SC-88

Each lead has same dimensions

Tr2

Tr1

(4)

(5)

(6)

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Limits

Unit

VCBO

VCEO

VEBO

°C

Collector power dissipation

Junction temperature

Storage temperature

150

∗

150

Tstg

−55 to +150

∗

120mW per element must not be exceeded.

zPackage, marking, and packaging specifications

Type

Package

UMX21N

UMT6

X21

Marking

Code

Basic ordering unit (pieces)

3000

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBO

BVCEO

BVEBO

−

800

−

0.5

0.3

560

−

=10µA

=1mA

=10µA

CB=10V

EB=2V

CBO

EBO

CE(sat)

−

270

300

−

µA

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

=10mA/1mA

=5V/10mA

CE=5V, I = −10mA, f=200MHz

CB=10V, I =0A, f=1MHz

=3mA, V =100mVrms, f=500kHz

−

CE/IC

Transition frequency

MHz

Ω

Output capacitance

Cob

Ron

1.7

−

Output-on resistance

−

1/2

12 3

中文翻译

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