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UMG9NTR

更新时间: 2024-09-28 12:27:43
品牌 Logo 应用领域
罗姆 - ROHM 晶体数字晶体管
页数 文件大小 规格书
8页 463K
描述
EMG9 / UMG9N / FMG9A NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

UMG9NTR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-88A
包装说明:SMALL OUTLINE, R-PDSO-G5针数:5
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:1.72
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-G5
JESD-609代码:e2湿度敏感等级:1
元件数量:2端子数量:5
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:TIN COPPER端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzVCEsat-Max:0.3 V
Base Number Matches:1

UMG9NTR 数据手册

 浏览型号UMG9NTR的Datasheet PDF文件第2页浏览型号UMG9NTR的Datasheet PDF文件第3页浏览型号UMG9NTR的Datasheet PDF文件第4页浏览型号UMG9NTR的Datasheet PDF文件第5页浏览型号UMG9NTR的Datasheet PDF文件第6页浏览型号UMG9NTR的Datasheet PDF文件第7页 
EMG9 / UMG9N / FMG9A  
Datasheet  
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)  
lOutline  
EMT5  
UMT5  
Parameter  
VCC  
Tr1 and Tr2  
50V  
(3)  
(5)  
(1)  
(4)  
(1)  
(4)  
(2)  
IC(MAX.)  
R1  
100mA  
10kW  
10kW  
(3)  
(5)  
EMG9  
(SC-107BB)  
UMG9N  
SOT-353 (SC-88A)  
R2  
SMT5  
(1)  
lFeatures  
(2)  
1) Built-In Biasing Resistors, R1 = R2 = 10kW.  
(5)  
(3)  
2) Two DTC114E chips in one package.  
3) Emitter(GND)-common type.  
FMG9A  
(SC-74A)  
4) Built-in bias resistors enable the configuration of  
an inverter circuit without connecting external  
input resistors (see inner circuit).  
5) The bias resistors consist of thin-film resistors  
lInner circuit  
with complete isolation to allow negative biasing  
of the input. They also have the advantage of  
completely eliminating parasitic effects.  
6) Only the on/off conditions need to be set for  
operation, making the circuit design easy.  
7) Lead Free/RoHS Compliant.  
EMG9 / UMG9N  
FMG9A  
GND  
(2)  
GND  
(4)  
IN  
(3)  
IN  
(1)  
IN  
(3)  
IN  
(5)  
(4)  
(5)  
(2)  
(1)  
OUT  
OUT  
OUT  
OUT  
lApplication  
Inverter circuit, Interface circuit, Driver circuit  
lPackaging specifications  
Package  
size  
(mm)  
Basic  
ordering  
unit (pcs)  
Taping  
code  
Reel size Tape width  
Part No.  
Package  
Marking  
(mm)  
(mm)  
EMG9  
EMT5  
UMT5  
SMT5  
1616  
2021  
2928  
T2R  
TR  
180  
180  
180  
8
8
8
8,000  
G9  
G9  
G9  
UMG9N  
FMG9A  
3,000  
T148  
3,000  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
2012.06 - Rev.B  
1/7  

UMG9NTR 替代型号

型号 品牌 替代类型 描述 数据表
EMG9T2R ROHM

类似代替

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, EMT5, 5
FMG9AT148 ROHM

类似代替

NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
RN1501(TE85L) TOSHIBA

功能相似

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN,

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