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UMH11N PDF预览

UMH11N

更新时间: 2023-12-06 20:07:45
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 631K
描述
SOT-363

UMH11N 数据手册

 浏览型号UMH11N的Datasheet PDF文件第2页浏览型号UMH11N的Datasheet PDF文件第3页浏览型号UMH11N的Datasheet PDF文件第4页 
HANGJING ELECTRONICS TECHNOLOGY CO., LTD  
Transistors (Built-in Resistors)  
Dual Digital Transistors (NPN+NPN)  
UMH11N  
FEATURES  
SOT-363  
z
z
z
z
Two DTC114E chip in a package  
Mounting possible with SOT-363 automatic mounting machines  
Transistor elements are independent, eliminating interference  
Mounting cost and area be cut in half  
Marking: H11  
:
Absolute maximum ratings(Ta=25)  
Parameter  
Supply voltage  
Input voltage  
Symbol  
VCC  
Limits  
50  
Unit  
V
VIN  
-10~40  
50  
V
IO  
mA  
mW  
Output current  
IC(MAX)  
Pd  
100  
150  
Power dissipation  
Operation Junction and  
Storage Temperature Range  
-55~+150  
TJ,Tstg  
Electrical characteristics (Ta=25)  
Parameter  
Symbol  
VI(off)  
VI(on)  
VO(on)  
II  
Min  
Typ  
Max  
Unit  
Conditions  
0.5  
VCC=5V, IO=100μA  
VO=0.3V, IO=10mA  
IO/II=10mA/0.5mA  
VI=5V  
Input voltage  
V
3
Output voltage  
Input current  
0.1  
0.3  
0.88  
0.5  
V
mA  
μA  
Output current  
DC current gain  
Input resistance  
Resistance ratio  
Transition frequency  
IO(off)  
GI  
VCC=50V, VI=0  
VO=5V, IO=5mA  
30  
7
R1  
10  
1
13  
kΩ  
R2/R1  
fT  
0.8  
1.2  
250  
MHz  
VCE=10V, IE=5mA, f=100MHz  
Rev. - 2.0  
www.jscj-elec.com  
1

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