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UMH11N PDF预览

UMH11N

更新时间: 2024-01-18 02:21:27
品牌 Logo 应用领域
SECOS 晶体晶体管开关光电二极管
页数 文件大小 规格书
2页 441K
描述
NPN Mult i-Chip Built-in Resistors Transistor

UMH11N 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.71
其他特性:DIGITAL, BUILT IN BIAS RESISTOR最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UMH11N 数据手册

 浏览型号UMH11N的Datasheet PDF文件第2页 
UMH11N  
NPN Multi-Chip  
Elektronische Bauelemente  
Built-in Resistors Transistor  
RoHS Compliant Product  
SOT-363  
8o  
.055(1.40)  
.047(1.20)  
Features  
o
0
.026TYP  
(0.65TYP)  
* Mounting possible with UMT3 automatic mounting  
machines.  
.021REF  
(0.525)REF  
* Transistor elements are independent,  
eliminating interference.  
.053(1.35)  
.045(1.15)  
.096(2.45)  
.085(2.15)  
* Mounting cost and area can be cut in half.  
* Two DTC114E chips in a UMT package  
.018(0.46)  
.010(0.26)  
.014(0.35)  
.006(0.15)  
.006(0.15)  
.003(0.08)  
.087(2.20)  
.079(2.00)  
MARKING  
H11  
.004(0.10)  
.000(0.00)  
.043(1.10)  
.035(0.90)  
.039(1.00)  
.035(0.90)  
Dimensions in inches and (millimeters)  
Absolute maximum ratings(Ta=25)  
Parameter  
Symbol  
Unit  
Limits  
Supply voltage  
Input voltage  
VCC  
VIN  
50  
40  
V
V
-10~  
IO  
50  
100  
Output current  
mA  
IC(MAX)  
Pd  
Power dissipation  
Junction temperature  
Storage temperature  
150(TOTAL)  
150  
mW  
Tj  
-55~  
150  
tg  
Ts  
Electrical characteristics (Ta=25)  
Parameter  
Symbol  
VI(off)  
VI(on)  
VO(on)  
II  
Min.  
Typ  
Max.  
Unit  
Conditions  
VCC=5V ,IO=100µA  
VO=0.3V ,IO=10 mA  
IO/II=10mA/0.5mA  
VI=5V  
0.5  
Input voltage  
V
3
Output voltage  
Input current  
0.3  
0.88  
0.5  
V
mA  
µA  
Output current  
IO(off)  
GI  
VCC=50V, VI=0  
VO=5V ,IO=5mA  
DC current gain  
Input resistance  
Resistance ratio  
Transition frequency  
30  
7
R1  
10  
1
13  
K  
R2/R1  
fT  
0.8  
1.2  
250  
MHz  
VCE=10V ,IE=-5mA,f=100MHz  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jan-2006 Rev. B  
Page 1 of 2  

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