UMG9TL

更新时间： 2024-01-02 20:00:39

品牌	Logo	应用领域
罗姆 - ROHM		晶体小信号双极晶体管数字晶体管
页数	文件大小	规格书
2页	70K
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中文翻译

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数据手册

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UMG9TL 数据手册

EMG9 / UMG9N / FMG9A

Transistors

Emitter common

(dual digital transistors)

EMG9 / UMG9N / FMG9A

!Features

!External dimensions (Units : mm)

1) Two DTC114E in a EMT or UMT or SMT package.

2) Mounting cost and area can be cut in half.

EMG9

( )

(

)

1.2

1.6

!Structure

Epitaxial planar type

NPN silicon transistor

(Built-in resistor type)

Each lead has same dimensions

ROHM

: EMT5

Abbreviated symbol : G9

UMG9N

The following characteristics apply to both the DTr1 and

DTr2.

1.25

2.1

!Equivalent circuit

0.1Min.

Each lead has same dimensions

EMG9 / UMG9N

FMG9A

(3)

(4)

(5)

(3)

(2)

(1)

=10kΩ

ROHM

EIAJ

UMT5

SC-88A

DTr2

DTr1

DTr2

DTr1

Abbreviated symbol : G9

(2)

(1)

(4)

(5)/(6)

FMG9A

1.6

2.8

!Absolute maximum ratings (Ta = 25°C)

Limits

Parameter

Symbol

Unit

0.3to0.6

Each lead has same dimensions

Supply voltage

ROHM

EIAJ

SMT5

SC-74A

Input voltage

VIN

−10

Abbreviated symbol : G9

Output current

C (Max.)

100

∗

EMG9, UMG9N

150 (TOTAL)

300 (TOTAL)

150

Power

dissipation

FMG9A

Junction temperature

Storage temperature

˚C

Tstg

−55∼+150

1 120mW per element must not be exceeded.

2 200mW per element must not be exceeded.

∗

中文翻译

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