Datasheet > UMA3N

UMA3N

更新时间： 2024-09-13 12:20:39

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
1页	401K
描述
1General purpose transistors (dual transistors)

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中文翻译

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数据手册

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UMA3N 数据手册

UMA3N

General purpose transistors (dual transistors)

SOT-353

FEATURES

Two DTA143T chips in a package

Mounting cost and area be cut in half

Marking: A3

Equivalent circuit

Absolute maximum ratings (Ta=25℃)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

Limits

-50

Unit

-50

-5

-100

150

℃

P_C

T_j

Junction temperature

Storage Temperature

150

T_stg

-55~+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

-50

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I_C=-50μA,I_E=0

I_C=-1mA,I_B=0

I_E=-50μA,I_C=0

V_CB=-50V,I_E=0

V_EB=4V,I_C=0

-0.5

- 0.5

600

-0.3

μA

I_EBO

DC current gain

h_FE

V_CE=-5V,I_C=-1mA

100

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C=-5mA,I_B=-0.25mA

V_CE=-10V,I_C=-5mA, f=100MHz

250

4.7

MHz

KΩ

Input resistor

R₁

3.29

6.11

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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