UMA4NT1G

更新时间： 2024-11-30 03:02:07

品牌	Logo	应用领域
安森美 - ONSEMI		晶体小信号双极晶体管开关光电二极管
页数	文件大小	规格书
5页	60K
描述
Dual Common Emitter Bias Resistor Transistors

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中文翻译

获取价格

技术参数
数据手册
替代型号

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UMA4NT1G 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	SC-70	包装说明：	SMALL OUTLINE, R-PDSO-G5
针数：	5	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.47
Is Samacsys：	N	其他特性：	BUILT IN BIAS RESISTOR
最大集电极电流 (IC)：	0.1 A	集电极-发射极最大电压：	50 V
配置：	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	160
JESD-30 代码：	R-PDSO-G5	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	2
端子数量：	5	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.15 W	认证状态：	Not Qualified
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

UMA4NT1G 数据手册

UMA4NT1, UMA6NT1

Preferred Devices

Dual Common Emitter Bias

Resistor Transistors

PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

http://onsemi.com

The BRT (Bias Resistor Transistor) contains a single transistor with

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the UMC2NT1 series, two

BRT devices are housed in the SOT−353 package which is ideal for

low power surface mount applications where board space is at a

premium.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Pb−Free Packages are Available

MARKING

DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q

Ux M G

and Q , − minus sign for Q (PNP) omitted)

SC−88A/SOT−353

CASE 419A

STYLE 7

Rating

Symbol

Value

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

CBO

CEO

Vdc

100

mAdc

Ux = Device Code

x = 0 or 1

THERMAL CHARACTERISTICS

= Date Code

Thermal Resistance, Junction-to-Ambient

(Surface Mounted)

833

°C/W

= Pb−Free Package

(Note: Microdot may be in either location)

Operating and Storage Temperature Range T , T

−65 to +150

*150

°C

stg

Total Package Dissipation @ T = 25°C

ORDERING INFORMATION

(Note 1)

†

Device

UMA4NT1

UMA4NT1G

Package

Shipping

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Device mounted on a FR-4 glass epoxy printed circuit board using the

minimum recommended footprint.

SOT−353

3000/Tape & Reel

SOT−353

(Pb−Free)

UMA6NT1

SOT−353

3000/Tape & Reel

DEVICE RESISTOR VALUES

UMA6NT1G

SOT−353

(Pb−Free)

Device

R1 (K)

R2 (K)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

UMA4NT1

UMA6NT1

∞

Preferred devices are recommended choices for future use

and best overall value.

Publication Order Number:

May, 2006 − Rev. 4

UMA4NT1/D

12 3 4 5

中文翻译

下载PDF

UMA4NT1G 替代型号

型号	品牌	替代类型	描述	数据表
UMA4NT1	ONSEMI	完全替代	Dual Common Emitter Bias Resistor Transistors

与UMA4NT1G相关器件

型号	品牌	获取价格	描述	数据表
UMA4NT2G	ONSEMI	获取价格	TRANSISTOR PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353, BIP General Purp
UMA4NTL	ROHM	获取价格	暂无描述
UMA4TL	ROHM	获取价格	暂无描述
UMA4TR	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, MINIMOL
UMA5	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-25VAR
UMA5.0A	MICROSEMI	获取价格	ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V
UMA5.0AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, PLAST
UMA5.0CA	MICROSEMI	获取价格	ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V
UMA5.0CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Bidirectional, 1 Element, Silicon, PLASTI
UMA51A	MICROSEMI	获取价格	ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V

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