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UMA4NT1 PDF预览

UMA4NT1

更新时间： 2024-11-29 22:16:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
6页 51K
描述
Dual Common Emitter Bias Resistor Transistors

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中文翻译

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UMA4NT1 技术参数

是否无铅： 含铅生命周期：End Of Life
零件包装代码：SC-70包装说明：CASE 419A-02, SC-88A, SC-70, 5 PIN
针数：5Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.45
Is Samacsys：N其他特性：BUILT IN BIAS RESISTOR
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：160
JESD-30 代码：R-PDSO-G5JESD-609代码：e0
湿度敏感等级：1元件数量：2
端子数量：5封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：240极性/信道类型：PNP
最大功率耗散 (Abs)：0.15 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

UMA4NT1 数据手册

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UMA4NT1, UMA6NT1  
Preferred Devices  
Dual Common Emitter Bias  
Resistor Transistors  
PNP Silicon Surface Mount  
Transistors with Monolithic Bias  
Resistor Network  
http://onsemi.com  
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the UMC2NT1 series, two  
BRT devices are housed in the SOT−353 package which is ideal for  
low power surface mount applications where board space is at a  
premium.  
3
2
1
R1  
R1  
Q1  
Q2  
4
5
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel  
MARKING  
DIAGRAM  
5
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q  
A
1
d
Ux  
and Q , − minus sign for Q (PNP) omitted)  
2
1
SC−88A/SOT−353  
CASE 419A  
STYLE 7  
Rating  
Collector-Base Voltage  
Symbol  
Value  
50  
Unit  
1
2
3
V
CBO  
V
CEO  
Vdc  
Vdc  
Ux = Device Marking  
Collector-Emitter Voltage  
Collector Current  
50  
x
d
= 0 or 1  
= Date Code  
I
C
100  
mAdc  
THERMAL CHARACTERISTICS  
ORDERING INFORMATION  
Thermal Resistance − Junction-to-Ambient  
(surface mounted)  
R
833  
°C/W  
°C  
θ
JA  
†
Device  
Package  
SOT−323  
SOT−323  
Shipping  
Operating and Storage Temperature  
Range  
T , T  
J
−65 to  
+150  
stg  
UMA4NT1  
UMA6NT1  
3000/Tape & Reel  
3000/Tape & Reel  
Total Package Dissipation  
P
*150  
mW  
D
@ T = 25°C (Note 1.)  
A
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
UMA4NT1  
UMA6NT1  
U0  
U1  
10  
47  
∞
∞
Preferred devices are recommended choices for future use  
1. Device mounted on a FR-4 glass epoxy printed circuit board using the  
minimum recommended footprint.  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
March, 2004 − Rev. 2  
UMA4NT1/D  
 
123456

中文翻译

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UMA4NT1 替代型号

型号 品牌 替代类型 描述 数据表
UMA4NT1G ONSEMI

完全替代

 Dual Common Emitter Bias Resistor Transistors

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