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UGE10BCT PDF预览

UGE10BCT

更新时间: 2024-11-06 01:11:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 89K
描述
Glass passivated pellet chip junction

UGE10BCT 数据手册

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UGE10BCT, UGE10CCT, UGE10DCT  
www.vishay.com  
Vishay General Semiconductor  
Dual Common Cathode Ultrafast Rectifier  
FEATURES  
TO-220AB  
• Power pack  
• Glass passivated pellet chip junction  
• Ultrafast recovery times  
• Soft recovery characteristics  
• Low switching losses, high efficiency  
• High forward surge capability  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
3
2
1
UGE10xCT  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PIN 1  
PIN 3  
PIN 2  
CASE  
TYPICAL APPLICATIONS  
For use in low voltage, high frequency rectifier of switching  
power supplies, freewheeling diodes, DC/DC converters  
and polarity protection application.  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 5.0 A  
MECHANICAL DATA  
VRRM  
IFSM  
100 V, 150 V, 200 V  
55 A  
Case: TO-220AB  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
trr  
25 ns  
VF  
0.895 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
TJ max.  
Package  
Diode variations  
150 °C  
TO-220AB  
Common cathode  
Polarity: As marked  
Mounting Torque: 10 in-lbs max.  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL UGE10BCT  
UGE10CCT  
UGE10DCT  
200  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
VRRM  
VRWM  
VDC  
100  
100  
100  
150  
150  
150  
10  
V
V
V
200  
Maximum DC blocking voltage  
200  
total device  
Maximum average forward rectified current at TC = 100 °C  
per diode  
IF(AV)  
A
5.0  
Peak forward surge current 8.3 ms single half sine-wave  
IFSM  
IRSM  
55  
A
A
superimposed on rated load per diode  
Non-repetitive peak reverse current per diode at tp = 100 μs  
0.2  
8
Electrostatic discharge capacitor voltage,  
human body model: C = 250 pF, R = 1.5 k  
VC  
kV  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-40 to +150  
Revision: 23-Feb-16  
Document Number: 87917  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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