Datasheet > TSP630M

TSP630M

更新时间： 2024-09-15 07:07:59

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描述
200V N-Channel MOSFET

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TSP630M 数据手册

TSP630M / TSF630M

200V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Truesemi‘s

advanced planar stripe DMOS technology.

•

9.5A, 200V, R_DS(on)= 0.40Ω @V_GS= 10 V

Low gate charge ( typical 20nC)

High ruggedness

Fast switching

100% avalanche tested

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge

topology.

Improved dv/dt capability

_{D

●

◀

▲

●

{

TO-220F

TO-220

G D

D S

^{S

Absolute Maximum Ratings

T = 25°Cunless otherwise noted

Symbol

V_DSS

Parameter

TSP630M

TSF630M

Units

Drain-Source Voltage

200

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

- Pulsed

Drain Current

9.5

6.0

9.5*

6.0 *

38 *

I_DM

(Note 1)

Drain Current

V_GSS

E_AS

E_AR

Gate-Source Voltage

± 30

210

7.2

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

V/ns

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25°C)

dv/dt

P_D

5.5

- Derate above 25°C

Operating and Storage Temperature Range

0.57

0.30

W/°C

°C

T_J, T_STG

T_L

-55 to +150

300

Maximum lead temperature for soldering purposes,

°C

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_θJC

Parameter

TSP630M

TSF630M

3.33

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

1.74

0.5

R_θCS

R_θJA

62.5

代理销售：深圳德江源电子有限公司 0755-82966416 15989331311

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