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TSP740M PDF预览

TSP740M

更新时间: 2024-11-06 07:07:59
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7页 264K
描述
400V N-Channel MOSFET

TSP740M 数据手册

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TSP740M / TSF740M  
400V N-Channel MOSFET  
General Description  
Features  
This Power MOSFET is produced using Truesemi‘s  
advanced planar stripe DMOS technology.  
10.5A, 400V, RDS(on) = 0.53@VGS = 10 V  
Low gate charge ( typical 30nC)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switched mode power supplies,  
active power factor correction based on half bridge  
topology.  
{D  
G
{
TO-220F  
TO-220  
G D  
S
G
D S  
{S  
Absolute Maximum Ratings  
T = 25°Cunless otherwise noted  
C
Symbol  
VDSS  
Parameter  
TSP740M  
TSF740M  
Units  
V
Drain-Source Voltage  
400  
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
- Pulsed  
Drain Current  
10.5  
6.6  
42  
10.5*  
6.6 *  
42 *  
A
A
IDM  
(Note 1)  
Drain Current  
A
VGSS  
EAS  
EAR  
Gate-Source Voltage  
± 30  
378  
13.9  
4.5  
V
(Note 2)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
mJ  
mJ  
V/ns  
W
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TC = 25°C)  
dv/dt  
PD  
139  
45.5  
0.36  
- Derate above 25°C  
Operating and Storage Temperature Range  
1.11  
W/°C  
°C  
TJ, TSTG  
TL  
-55 to +150  
300  
Maximum lead temperature for soldering purposes,  
°C  
1/8" from case for 5 seconds  
* Drain current limited by maximum junction temperature.  
Thermal Characteristics  
Symbol  
RθJC  
Parameter  
TSP740M  
TSF740M  
2.75  
Units  
°C/W  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink Typ.  
Thermal Resistance, Junction-to-Ambient  
0.90  
0.5  
RθCS  
RθJA  
--  
62.5  
62.5  
代理销售深圳德江源电子有限公司 0755-82966416 15989331311  

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